| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
42AH1854
|
Newark | Mosfet, N-Ch, 40V, 300A, 175Deg C, 500W Rohs Compliant: Yes |Infineon IRL40T209ATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
|
Buy Now |
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
|
Package Description
|
SMALL OUTLINE, R-PSSO-F8
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
Factory Lead Time
|
52 Weeks
|
|
Samacsys Manufacturer
|
Infineon
|
|
Avalanche Energy Rating (Eas)
|
875 mJ
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
40 V
|
|
Drain Current-Max (ID)
|
300 A
|
|
Drain-source On Resistance-Max
|
0.00072 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JESD-30 Code
|
R-PSSO-F8
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
8
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
175 °C
|
|
Operating Temperature-Min
|
-55 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
500 W
|
|
Pulsed Drain Current-Max (IDM)
|
1200 A
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
Tin (Sn)
|
|
Terminal Form
|
FLAT
|
|
Terminal Position
|
SINGLE
|
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRL40T209 | Power Field-Effect Transistor, | Infineon Technologies AG | IRL40T209ATMA1 vs IRL40T209 |