Datasheets
IRL7486MTRPBF by:

Power Field-Effect Transistor, 209A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for IRL7486MTRPBF by Infineon Technologies AG

Overview of IRL7486MTRPBF by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Medical Imaging Automotive Robotics and Drones

Price & Stock for IRL7486MTRPBF

Part # Distributor Description Stock Price Buy
DISTI # 53Y4841
Newark Mosfet, N Ch, 40V, 209A, Directfet Me-8, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:209A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Infineon IRL7486MTRPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 18784
  • 1 $1.8500
  • 10 $1.6100
  • 25 $1.5500
  • 50 $1.4800
  • 100 $1.4100
  • 250 $1.4000
  • 500 $1.2800
  • 1,000 $1.1500
$1.1500 / $1.8500 Buy Now
DISTI # IRL7486MTRPBFCT-ND
DigiKey MOSFET N-CH 40V 209A DIRECTFET Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 4375
In Stock
  • 1 $2.4900
  • 10 $2.0660
  • 100 $1.6443
  • 500 $1.3914
  • 1,000 $1.1805
  • 2,000 $1.1215
  • 4,800 $1.0794
$1.0794 / $2.4900 Buy Now
DISTI # IRL7486MTRPBF
Avnet Americas Trans MOSFET N-CH 40V 209A 10-Pin Direct-FET ME T/R - Tape and Reel (Alt: IRL7486MTRPBF) RoHS: Compliant Min Qty: 4800 Package Multiple: 4800 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 4,800 $1.2941
$1.2941 Buy Now
DISTI # 942-IRL7486MTRPBF
Mouser Electronics MOSFET 40V Single N-Channel HEXFET RoHS: Compliant 4300
  • 1 $1.6200
  • 10 $1.4200
  • 100 $1.2100
  • 500 $1.1000
  • 1,000 $1.0500
  • 4,800 $1.0400
$1.0400 / $1.6200 Buy Now
Future Electronics Single N-Channel 40 V 1.25 mOhm 76 nC HEXFET® Power Mosfet - DirectFET® RoHS: Compliant pbFree: Yes Min Qty: 4800 Package Multiple: 4800 Container: Reel 350400
Reel
  • 4,800 $1.0300
$1.0300 Buy Now
Future Electronics Single N-Channel 40 V 1.25 mOhm 76 nC HEXFET® Power Mosfet - DirectFET® RoHS: Compliant pbFree: Yes Min Qty: 4800 Package Multiple: 4800 Container: Reel 0
Reel
  • 4,800 $1.0300
$1.0300 Buy Now
Future Electronics Single N-Channel 40 V 1.25 mOhm 76 nC HEXFET® Power Mosfet - DirectFET® RoHS: Compliant pbFree: Yes Min Qty: 4800 Package Multiple: 4800 Container: Reel 0
Reel
  • 4,800 $1.0300
$1.0300 Buy Now
Future Electronics Single N-Channel 40 V 1.25 mOhm 76 nC HEXFET® Power Mosfet - DirectFET® RoHS: Compliant pbFree: Yes Min Qty: 4800 Package Multiple: 4800 Container: Reel 0
Reel
  • 4,800 $1.0300
$1.0300 Buy Now
Rochester Electronics IRL7486M - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 156973
  • 1 $1.2200
  • 25 $1.1900
  • 100 $1.1400
  • 500 $1.1000
  • 1,000 $1.0400
$1.0400 / $1.2200 Buy Now
DISTI # IRL7486MTRPBF
Avnet Americas Trans MOSFET N-CH 40V 209A 10-Pin Direct-FET ME T/R - Tape and Reel (Alt: IRL7486MTRPBF) RoHS: Compliant Min Qty: 4800 Package Multiple: 4800 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 4,800 $1.2941
$1.2941 Buy Now
Ameya Holding Limited Single N-Channel 40 V 1.25 mOhm 76 nC HEXFET® Power Mosfet - DirectFET® 33600
RFQ
DISTI # IRL7486MTRPBF
Avnet Americas Trans MOSFET N-CH 40V 209A 10-Pin Direct-FET ME T/R - Tape and Reel (Alt: IRL7486MTRPBF) RoHS: Compliant Min Qty: 4800 Package Multiple: 4800 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 4,800 $1.2941
$1.2941 Buy Now
CHIPMALL.COM LIMITED MOSFET N-CH 40V 209A DIRECTFET 3664
  • 1 $1.0689
  • 10 $0.8833
  • 100 $0.6653
  • 500 $0.6142
  • 1,000 $0.5922
$0.5922 / $1.0689 Buy Now
Chips Pulse Industry Limited MG-WDSON-8 Pre-ordered transistors RoHS Purchase Online, Ship Immediately 4396
  • 30 $0.7171
  • 100 $0.6110
  • 500 $0.5640
  • 1,000 $0.5439
$0.5439 / $0.7171 Buy Now
DISTI # SP001567046
EBV Elektronik Trans MOSFET N-CH 40V 209A 10-Pin Direct-FET ME T/R (Alt: SP001567046) RoHS: Compliant Min Qty: 4800 Package Multiple: 4800 Lead time: 1 Weeks, 6 Days EBV - 0
Buy Now
DISTI # 2577179
element14 Asia-Pacific MOSFET, N CH, 40V, 209A, DIRECTFET ME-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape 18784
  • 1 $1.9522
  • 10 $1.6733
  • 100 $1.4458
  • 500 $1.3284
  • 1,000 $1.1963
$1.1963 / $1.9522 Buy Now
DISTI # 2577179RL
element14 Asia-Pacific MOSFET, N CH, 40V, 209A, DIRECTFET ME-8 RoHS: Compliant Min Qty: 100 Container: Reel 18784
  • 100 $1.4458
  • 500 $1.3284
  • 1,000 $1.1963
$1.1963 / $1.4458 Buy Now
DISTI # 2577179
Farnell MOSFET, N CH, 40V, 209A, DIRECTFET ME-8 RoHS: Compliant Min Qty: 1 Lead time: 13 Weeks, 1 Days Container: Cut Tape 18784
  • 1 $2.0741
  • 10 $1.6173
  • 100 $1.3580
  • 500 $1.2469
  • 1,000 $1.1160
$1.1160 / $2.0741 Buy Now
DISTI # 2577179RL
Farnell MOSFET, N CH, 40V, 209A, DIRECTFET ME-8 RoHS: Compliant Min Qty: 100 Lead time: 13 Weeks, 1 Days Container: Reel 18784
  • 100 $1.3580
  • 500 $1.2469
  • 1,000 $1.1160
$1.1160 / $1.3580 Buy Now
LCSC 40V 209A 1m10V123A 104W 2.5V150uA 1PCSNChannel DirectFET MOSFETs ROHS 3664
  • 1 $1.0907
  • 10 $0.9013
  • 30 $0.7968
  • 100 $0.6789
  • 500 $0.6267
  • 1,000 $0.6043
$0.6043 / $1.0907 Buy Now
Sense Electronic Company Limited SMD 20000
RFQ
Win Source Electronics MOSFET N-CH 40V 209A / Brushed Motor drive applications 485000
  • 45 $1.1310
  • 110 $0.9280
  • 170 $0.8990
  • 230 $0.8700
  • 300 $0.8410
  • 400 $0.7540
$0.7540 / $1.1310 Buy Now

Part Details for IRL7486MTRPBF

IRL7486MTRPBF CAD Models

IRL7486MTRPBF Part Data Attributes

IRL7486MTRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRL7486MTRPBF Infineon Technologies AG Power Field-Effect Transistor, 209A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 190 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 209 A
Drain-source On Resistance-Max 0.00125 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XBCC-N6
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 836 A
Surface Mount YES
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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