Part Details for IRLH5030TRPBF by Infineon Technologies AG
Results Overview of IRLH5030TRPBF by Infineon Technologies AG
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (1 replacement)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRLH5030TRPBF Information
IRLH5030TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRLH5030TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
83R9947
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Newark | Mosfet, N-Ch, 100V, 100A, Qfn, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Infineon IRLH5030TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 2642 |
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$1.1300 / $2.9000 | Buy Now |
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DISTI #
IRLH5030TRPBF
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Avnet Americas | Power MOSFET, N Channel, 100 V, 100 A, 0.009 ohm, QFN, Surface Mount - Tape and Reel (Alt: IRLH5030TRPBF) COO: Taiwan (Province of China) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 26 Weeks, 0 Days Container: Reel | 0 |
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$0.7762 / $0.8880 | Buy Now |
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DISTI #
70019251
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RS | MOSFET, N-CHANNEL, 100V, 100A, 9.0 MOHM MAX, 44 NC QG, PQFN, LOGIC LEVEL Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$1.3700 / $1.7200 | RFQ |
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Rochester Electronics | IRLH5030 - HEXFET Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 35684 |
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$0.7874 / $1.2700 | Buy Now |
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DISTI #
IRLH5030TRPBF
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TME | Transistor: N-MOSFET, unipolar, 100V, 13A, 3.6W, PQFN5X6 Min Qty: 4000 | 0 |
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$1.1300 | RFQ |
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DISTI #
IRLH5030TRPBF
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Chip One Stop | Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 3975 |
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$0.7580 / $3.0300 | Buy Now |
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Chip Stock | INFINEONIRLH5030TRPBFMOSFETTransistor,NChannel,100A,100V,0.0072ohm,10V,2.5V | 13840 |
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RFQ | |
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DISTI #
SP001558752
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EBV Elektronik | Power MOSFET N Channel 100 V 100 A 0009 ohm QFN Surface Mount (Alt: SP001558752) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 27 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 100V 2.5V 1 N-Channel PQFN-8(5x6) Single FETs MOSFETs RoHS | 74 |
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$1.3979 / $2.3897 | Buy Now |
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Win Source Electronics | MOSFET N-CH 100V 13A 8PQFN | 10340 |
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$1.0909 / $1.6363 | Buy Now |
Part Details for IRLH5030TRPBF
IRLH5030TRPBF CAD Models
IRLH5030TRPBF Part Data Attributes
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IRLH5030TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLH5030TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 13A I(D), 100V, 0.0099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, ROHS COMPLIANT AND HALOGEN FREE, PLASTIC, QFN-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 26 Weeks | |
| Avalanche Energy Rating (Eas) | 230 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.0099 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 150 Pf | |
| JESD-30 Code | R-PDSO-N8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 156 W | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Form | No Lead | |
| Terminal Position | Dual | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for IRLH5030TRPBF
This table gives cross-reference parts and alternative options found for IRLH5030TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLH5030TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRLH5030TR2PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 13A I(D), 100V, 0.0099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, ROHS COMPLIANT AND HALOGEN FREE, PLASTIC, QFN-8 | IRLH5030TRPBF vs IRLH5030TR2PBF |
IRLH5030TRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRLH5030TRPBF is -55°C to 150°C.
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To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
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The recommended gate drive voltage for the IRLH5030TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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Yes, the IRLH5030TRPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
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Handle the device with ESD-protective equipment, use an anti-static wrist strap, and ensure the device is stored in an ESD-protective package.