Manufacturer | Description | Price Range | Set Alert | Details |
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Samsung Semiconductor | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 |
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