Part Details for IRLL3303TRPBF by Infineon Technologies AG
Results Overview of IRLL3303TRPBF by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (9 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRLL3303TRPBF Information
IRLL3303TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRLL3303TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
40M7984
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Newark | N Channel Mosfet, 30V, 4.6A Sot-223, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:4.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Infineon IRLL3303TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
70017818
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RS | MOSFET, POWER, N-CH, VDSS 30V, RDS(ON) 0.031OHM, ID 4.6A, SOT-223,PD 1W, VGS +/-16V Min Qty: 20 Package Multiple: 1 Container: Bulk | 0 |
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$0.6300 / $0.7400 | RFQ |
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Bristol Electronics | 260 |
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RFQ | ||
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Chip Stock | Mosfet,Power, N-ch, Vdss30V, Rds(on)0.031Ohm, Id4.6A, SOT-223, Pd1W, Vgs+/-16V | 10710 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 30V 4.6A SOT223 | 9210 |
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$2.2727 / $3.4090 | Buy Now |
Part Details for IRLL3303TRPBF
IRLL3303TRPBF CAD Models
IRLL3303TRPBF Part Data Attributes
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IRLL3303TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLL3303TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 4.6A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, TO-261AA, 4 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Package Description | Sot-223, 4 Pin | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 140 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 4.6 A | |
| Drain-source On Resistance-Max | 0.031 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 170 Pf | |
| JEDEC-95 Code | TO-261AA | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 2.1 W | |
| Pulsed Drain Current-Max (IDM) | 37 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for IRLL3303TRPBF
This table gives cross-reference parts and alternative options found for IRLL3303TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLL3303TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRLL3303TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.6A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, TO-261AA, 4 PIN | IRLL3303TRPBF vs IRLL3303TRPBF |
| IRLL3303 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, | IRLL3303TRPBF vs IRLL3303 |
| IRLL3303PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 4.6A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE, TO-261AA, 4 PIN | IRLL3303TRPBF vs IRLL3303PBF |
| IRLL3303 | International Rectifier | Check for Price | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, | IRLL3303TRPBF vs IRLL3303 |
| PMPB29XNE,115 | Nexperia | Check for Price | PMPB29XNE - 30 V, single N-channel Trench MOSFET@en-us DFN 6-Pin | IRLL3303TRPBF vs PMPB29XNE,115 |
| PMPB29XNE | Nexperia | Check for Price | Power Field-Effect Transistor, 5A I(D), 30V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IRLL3303TRPBF vs PMPB29XNE |
| 934066868115 | Nexperia | Check for Price | Power Field-Effect Transistor, 5A I(D), 30V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IRLL3303TRPBF vs 934066868115 |
| IRLL3303HR | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.6A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN | IRLL3303TRPBF vs IRLL3303HR |
| PMPB29XNEA | Nexperia | Check for Price | Power Field-Effect Transistor | IRLL3303TRPBF vs PMPB29XNEA |
IRLL3303TRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRLL3303TRPBF is -40°C to 150°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance.
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To minimize EMI, it's recommended to use a multi-layer PCB with a solid ground plane, keep the layout compact, and use shielding where possible. Additionally, ensure that the device is placed away from noise sources and antennas.
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The IRLL3303TRPBF is rated for a maximum voltage of 30V. If your application requires higher voltages, you may need to consider using a different device or adding external voltage regulation.
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To protect the device from ESD, handle the device by the body, use an anti-static wrist strap or mat, and ensure that the PCB is properly grounded. Additionally, use ESD-sensitive handling and storage procedures.