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Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
IRLML2502TRPBF
Yes
Active
INFINEON TECHNOLOGIES AG
LEAD FREE, MICRO-3
compliant
EAR99
15 Weeks
Infineon Technologies AG
1.21
IRLML2502TRPBF N-Channel MOSFET, 4.2 A, 20 V IRLML2502, 3-Pin SOT-23 Infineon
HIGH RELIABILITY
SINGLE WITH BUILT-IN DIODE
20 V
4.2 A
4.2 A
0.045 Ω
METAL-OXIDE SEMICONDUCTOR
TO-236AB
R-PDSO-G3
e3
1
1
3
ENHANCEMENT MODE
150 °C
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
1.25 W
33 A
Not Qualified
FET General Purpose Power
YES
Matte Tin (Sn)
GULL WING
DUAL
30
SWITCHING
SILICON
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3,046,268
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRLML2502 Transistors | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3 | International Rectifier | IRLML2502TRPBF vs IRLML2502 |
| IRLML2502TR Transistors | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3 | International Rectifier | IRLML2502TRPBF vs IRLML2502TR |
| IRLML2502PBF Transistors | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN AND LEAD FREE, MICRO-3 | International Rectifier | IRLML2502TRPBF vs IRLML2502PBF |
| IRLML2502GTRPBF Transistors | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | Infineon Technologies AG | IRLML2502TRPBF vs IRLML2502GTRPBF |
2,380 of 3,262,357 parts
0% change vs. last year339 of 39,580 parts
0% change vs. last year18 of 16,542 parts
0% change vs. last yearA: IRLML6402 Transistor Equivalent Substitute - MOSFET Cross-Reference Search more
A: These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. more
A: Equivalents and alternatives : Alternative products 1: FDN336P NTR3162P TSM2301CX more
A: P-Channel MOSFETs STS2301 By SamHop Microelectronics Corp. more
A: Simulation Models: more
A: MOSFETs, Semiconductors and Actives, mosfet, Transistors, Discretes (diodes, transistors, thyristors ...) more
A: In the tutorials referenced by Adafruit and Sparkfun they connect an Arduino output pin directly to the MOSFET gate. But others insist that you need a current limiting resistor to protect the microcontroller output pin. more
A: You can replace IRLML2502 with IRFML8244, IRLML0030, IRLML6244, IRLML6344. more
