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Part Details for IRLML6401GTRPBF by Infineon Technologies AG
Overview of IRLML6401GTRPBF by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for IRLML6401GTRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
IRLML6401GTRPBFCT-ND
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DigiKey | MOSFET P-CH 12V 4.3A SOT-23-3 Min Qty: 6000 Lead time: 98 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Temporarily Out of Stock |
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$0.0909 / $0.1091 | Buy Now |
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DISTI #
70019847
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RS | MOSFET, P-CH, -12V, -4.3A, 50 MOHM, 10 NC QG, LOGIC LVL, SOT-23, HALOGEN-FREE | Infineon IRLML6401GTRPBF RoHS: Not Compliant Min Qty: 6000 Package Multiple: 1 Container: Bulk | 0 |
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$0.1660 / $0.2080 | RFQ |
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Bristol Electronics | 60 |
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RFQ | ||
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Quest Components | 48 |
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$0.3570 / $0.5950 | Buy Now |
Part Details for IRLML6401GTRPBF
IRLML6401GTRPBF CAD Models
IRLML6401GTRPBF Part Data Attributes
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IRLML6401GTRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLML6401GTRPBF
Infineon Technologies AG
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | , | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 33 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 12 V | |
| Drain Current-Max (ID) | 4.3 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 125 pF | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.3 W | |
| Pulsed Drain Current-Max (IDM) | 34 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 460 ns | |
| Turn-on Time-Max (ton) | 43 ns |
Alternate Parts for IRLML6401GTRPBF
This table gives cross-reference parts and alternative options found for IRLML6401GTRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLML6401GTRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRLML6401GPBF | Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | Infineon Technologies AG | IRLML6401GTRPBF vs IRLML6401GPBF |
| IRLML6401TRPBF | Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3 | Infineon Technologies AG | IRLML6401GTRPBF vs IRLML6401TRPBF |
| CDM6401 | Small Signal Field-Effect Transistor, | Continental Device India Ltd | IRLML6401GTRPBF vs CDM6401 |
| IRLML6401PBF | Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 | Infineon Technologies AG | IRLML6401GTRPBF vs IRLML6401PBF |
| IRLML6401TR | Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3 | International Rectifier | IRLML6401GTRPBF vs IRLML6401TR |