Part Details for IRLML6401TR by CYT Opto-electronic
Overview of IRLML6401TR by CYT Opto-electronic
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Energy and Power Systems
Renewable Energy
Automotive
Part Details for IRLML6401TR
IRLML6401TR CAD Models
IRLML6401TR Part Data Attributes
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IRLML6401TR
CYT Opto-electronic
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Datasheet
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IRLML6401TR
CYT Opto-electronic
Transistor
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| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | SHENZHEN CHANGYUNTONG IC DESIGN CO LTD | |
| Package Description | MICRO-3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 33 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 12 V | |
| Drain Current-Max (ID) | 4.3 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 125 pF | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.3 W | |
| Pulsed Drain Current-Max (IDM) | 34 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 460 ns | |
| Turn-on Time-Max (ton) | 43 ns |
Alternate Parts for IRLML6401TR
This table gives cross-reference parts and alternative options found for IRLML6401TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLML6401TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRLML6401GPBF | Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | Infineon Technologies AG | IRLML6401TR vs IRLML6401GPBF |
| IRLML6401 | Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3 | International Rectifier | IRLML6401TR vs IRLML6401 |
| IRLML6401GTRPBF | Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, | Infineon Technologies AG | IRLML6401TR vs IRLML6401GTRPBF |
| IRLML6401TRPBF | Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3 | Infineon Technologies AG | IRLML6401TR vs IRLML6401TRPBF |