-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for IRLML6401TRPBF by Infineon Technologies AG
Overview of IRLML6401TRPBF by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for IRLML6401TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
11X6742
|
Newark | Mosfet, P Channel, -12V, -4.3A, Sot-23-3, Full Reel, Transistor Polarity:P Channel, Drain Source Voltage Vds:12V, Continuous Drain Current Id:4.3A, On Resistance Rds(On):0.05Ohm, Transistor Mounting:Surface Mount, No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IRLML6401TRPBF Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.1320 | Buy Now |
|
DISTI #
87AK1453
|
Newark | Mosfet, P-Ch, 12V, 4.3A, Sot-23 Rohs Compliant: Yes |Infineon IRLML6401TRPBF Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.0750 / $0.1140 | Buy Now |
|
DISTI #
63J7615
|
Newark | P Channel Mosfet, -12V, -4.3A Sot-23, Channel Type:P Channel, Drain Source Voltage Vds:12V, Continuous Drain Current Id:4.3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:550Mv Rohs Compliant: Yes |Infineon IRLML6401TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 220139 |
|
$0.1500 / $0.4720 | Buy Now |
|
DISTI #
IRLML6401PBFCT-ND
|
DigiKey | MOSFET P-CH 12V 4.3A SOT23 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Tape & Reel (TR), Cut Tape (CT) |
68167 In Stock |
|
$0.0862 / $0.4000 | Buy Now |
|
DISTI #
IRLML6401TRPBF
|
Avnet Americas | Trans MOSFET P-CH 12V 4.3A 3-Pin Micro T/R - Tape and Reel (Alt: IRLML6401TRPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.0740 / $0.0910 | Buy Now |
|
DISTI #
63J7615
|
Avnet Americas | Trans MOSFET P-CH 12V 4.3A 3-Pin Micro T/R - Product that comes on tape, but is not reeled (Alt: 63J7615) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 23 Weeks, 6 Days Container: Ammo Pack | 33479 Partner Stock |
|
$0.2140 / $0.4720 | Buy Now |
|
DISTI #
942-IRLML6401TRPBF
|
Mouser Electronics | MOSFET MOSFT P-Ch -4.3A 50mOhm 10nC Log Lvl RoHS: Compliant | 344864 |
|
$0.0920 / $0.4000 | Buy Now |
|
|
Future Electronics | Single P-Channel 12 V 0.05 Ohm 10 nC SMT HEXFET® Power Mosfet - MICRO-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 2847000Reel |
|
$0.0837 / $0.0940 | Buy Now |
|
|
Future Electronics | Single P-Channel 12 V 0.05 Ohm 10 nC SMT HEXFET® Power Mosfet - MICRO-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 9000Reel |
|
$0.0837 / $0.0951 | Buy Now |
|
|
Bristol Electronics | Min Qty: 9 | 640 |
|
$0.1800 / $0.6000 | Buy Now |
Part Details for IRLML6401TRPBF
IRLML6401TRPBF CAD Models
IRLML6401TRPBF Part Data Attributes
|
|
IRLML6401TRPBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRLML6401TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-3
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SOT-23, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 23 Weeks, 6 Days | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 33 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 12 V | |
| Drain Current-Max (ID) | 4.3 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 125 pF | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 1.3 W | |
| Power Dissipation-Max (Abs) | 1.3 W | |
| Pulsed Drain Current-Max (IDM) | 34 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |