Part Details for IRLML6402GPBF by Infineon Technologies AG
Overview of IRLML6402GPBF by Infineon Technologies AG
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for IRLML6402GPBF
IRLML6402GPBF CAD Models
IRLML6402GPBF Part Data Attributes
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IRLML6402GPBF
Infineon Technologies AG
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Datasheet
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IRLML6402GPBF
Infineon Technologies AG
Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | LEAD FREE, MICRO-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 11 mJ | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Peak Reflow Temperature (Cel) | 260 | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| Qualification Status | Not Qualified | |
| Terminal Finish | Matte Tin (Sn) | |
| Time@Peak Reflow Temperature-Max (s) | 30 |
Alternate Parts for IRLML6402GPBF
This table gives cross-reference parts and alternative options found for IRLML6402GPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLML6402GPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRLML6402TRPBF | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | International Rectifier | IRLML6402GPBF vs IRLML6402TRPBF |
| BL3435 | Small Signal MOSFET; Channel Polarity: P channel; PD Max (W): 1.4W; V(BR)DSS Min (V): -20V; ID Max (A): -3.5A; RDS(ON) Max (Ω): 0.07 Ohm; ID (A): -3.5A; VGS (V): -4.5V; VGS Max (V): -1V; ID (mA): -250mA; GFS Min (S): 15 S; VDS (V): -5V; ID (A) 1: -3.5A; Package: SOT-23 | Galaxy Microelectronics | IRLML6402GPBF vs BL3435 |
| IRLML6402 | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO-3 | International Rectifier | IRLML6402GPBF vs IRLML6402 |
| IRLML6402TR | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO-3 | International Rectifier | IRLML6402GPBF vs IRLML6402TR |
| IRLML6402GTRPBF | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | Infineon Technologies AG | IRLML6402GPBF vs IRLML6402GTRPBF |
| IRLML6402GPBF | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | International Rectifier | IRLML6402GPBF vs IRLML6402GPBF |
| IRLML6402PBF | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN AND LEAD FREE, MICRO-3 | International Rectifier | IRLML6402GPBF vs IRLML6402PBF |
| IRLML6402TRPBF | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | Infineon Technologies AG | IRLML6402GPBF vs IRLML6402TRPBF |