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Part Details for IRLML6402TRPBF by Infineon Technologies AG
Overview of IRLML6402TRPBF by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRLML6402TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
97K2355
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Newark | Mosfet, P-Ch, 20V, 3.7A, 150Deg C, 1.3W, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:3.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:550Mv Rohs Compliant: Yes |Infineon IRLML6402TRPBF Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 170258 |
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$0.1400 / $0.4780 | Buy Now |
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DISTI #
87AK1454
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Newark | Mosfet, P-Ch, 20V, 3.7A, Sot-23 Rohs Compliant: Yes |Infineon IRLML6402TRPBF Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.1100 / $0.1270 | Buy Now |
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DISTI #
IRLML6402PBFCT-ND
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DigiKey | MOSFET P-CH 20V 3.7A SOT23 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
114103 In Stock |
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$0.0898 / $0.4200 | Buy Now |
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DISTI #
IRLML6402TRPBF
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Avnet Americas | Trans MOSFET P-CH 20V 3.7A 3-Pin Micro T/R - Tape and Reel (Alt: IRLML6402TRPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 12000 |
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$0.0829 / $0.0947 | Buy Now |
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DISTI #
IRLML6402TRPBF
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Avnet Americas | Trans MOSFET P-CH 20V 3.7A 3-Pin Micro T/R - Tape and Reel (Alt: IRLML6402TRPBF) RoHS: Compliant Min Qty: 6000 Package Multiple: 1 Container: Reel | 0 |
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RFQ | |
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DISTI #
IRLML6402TRPBF
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Avnet Americas | Trans MOSFET P-CH 20V 3.7A 3-Pin Micro T/R - Tape and Reel (Alt: IRLML6402TRPBF) RoHS: Compliant Min Qty: 6000 Package Multiple: 1 Lead time: 53 Weeks, 1 Days Container: Reel | 0 |
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$0.0770 / $0.0947 | Buy Now |
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DISTI #
942-IRLML6402TRPBF
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Mouser Electronics | MOSFET MOSFT P-Ch -3.7A 65mOhm 8nC Log Lvl RoHS: Compliant | 427841 |
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$0.0950 / $0.4200 | Buy Now |
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Future Electronics | Single P-Channel 20 V 0.065 Ohm 8 nC HEXFET® Power Mosfet - MICRO-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 759000Reel |
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$0.0784 / $0.0880 | Buy Now |
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Future Electronics | Single P-Channel 20 V 0.065 Ohm 8 nC HEXFET® Power Mosfet - MICRO-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 9000Reel |
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$0.0784 / $0.0891 | Buy Now |
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Bristol Electronics | 966 |
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RFQ |
Part Details for IRLML6402TRPBF
IRLML6402TRPBF CAD Models
IRLML6402TRPBF Part Data Attributes
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IRLML6402TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLML6402TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SOT-23, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 11 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 3.7 A | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 110 pF | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 1.3 W | |
| Power Dissipation-Max (Abs) | 1.3 W | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRLML6402TRPBF
This table gives cross-reference parts and alternative options found for IRLML6402TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLML6402TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRLML6402TRPBF | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | International Rectifier | IRLML6402TRPBF vs IRLML6402TRPBF |
| BL3435 | Small Signal MOSFET; Channel Polarity: P channel; PD Max (W): 1.4W; V(BR)DSS Min (V): -20V; ID Max (A): -3.5A; RDS(ON) Max (Ω): 0.07 Ohm; ID (A): -3.5A; VGS (V): -4.5V; VGS Max (V): -1V; ID (mA): -250mA; GFS Min (S): 15 S; VDS (V): -5V; ID (A) 1: -3.5A; Package: SOT-23 | Galaxy Microelectronics | IRLML6402TRPBF vs BL3435 |
| IRLML6402 | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO-3 | International Rectifier | IRLML6402TRPBF vs IRLML6402 |
| IRLML6402TR | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO-3 | International Rectifier | IRLML6402TRPBF vs IRLML6402TR |
| IRLML6402GTRPBF | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | Infineon Technologies AG | IRLML6402TRPBF vs IRLML6402GTRPBF |
| IRLML6402GPBF | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | International Rectifier | IRLML6402TRPBF vs IRLML6402GPBF |
| IRLML6402PBF | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN AND LEAD FREE, MICRO-3 | International Rectifier | IRLML6402TRPBF vs IRLML6402PBF |