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IRLML6402TRPBF

Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3

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Total Inventory

6,923

Part Number Description Manufacturer Compare
IRLML6402GPBF Transistors Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 International Rectifier IRLML6402TRPBF vs IRLML6402GPBF
IRLML6402 Transistors Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO-3 International Rectifier IRLML6402TRPBF vs IRLML6402
IRLML6402TR Transistors Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO-3 International Rectifier IRLML6402TRPBF vs IRLML6402TR
IRLML6402GTRPBF Transistors Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 Infineon Technologies AG IRLML6402TRPBF vs IRLML6402GTRPBF
IRLML6402TRPBF Transistors Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 Infineon Technologies AG IRLML6402TRPBF vs IRLML6402TRPBF
IRLML6402PBF Transistors Transistor Infineon Technologies AG IRLML6402TRPBF vs IRLML6402PBF
Part Number Description Manufacturer Compare
IRLML6402 Transistors Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO-3 International Rectifier IRLML6402TRPBF vs IRLML6402
IRLML6402GPBF Transistors Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 International Rectifier IRLML6402TRPBF vs IRLML6402GPBF
IRLML6402GTRPBF Transistors Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 Infineon Technologies AG IRLML6402TRPBF vs IRLML6402GTRPBF
IRLML6402TRPBF Transistors Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 Infineon Technologies AG IRLML6402TRPBF vs IRLML6402TRPBF
IRLML6402PBF Transistors Transistor Infineon Technologies AG IRLML6402TRPBF vs IRLML6402PBF
IRLML6402TR Transistors Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO-3 International Rectifier IRLML6402TRPBF vs IRLML6402TR

Global Popularity

Popularity in Transistors

Popularity in Power Field-Effect Transistors

Popularity by Region

Very High

Medium

Good

Low

  • 1. United States
    100
  • 2. India
    87
  • 3. Germany
    79
  • 4. China
    67
  • 5. Saudi Arabia
    65
  • 6. South Korea
    64
  • 7. Italy
    64
  • 8. Canada
    62
  • 9. Russia
    61
  • 10. Malaysia
    61

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