Datasheets
IRLMS1902 by:

Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6

Part Details for IRLMS1902 by International Rectifier

Overview of IRLMS1902 by International Rectifier

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Price & Stock for IRLMS1902

Part # Distributor Description Stock Price Buy
Chip1Cloud HEXFET Power MOSFET 41000
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Part Details for IRLMS1902

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IRLMS1902 Part Data Attributes

IRLMS1902 International Rectifier
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IRLMS1902 International Rectifier Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC
Package Description SMALL OUTLINE, R-PDSO-G6
Pin Count 6
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 3.2 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 18 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLMS1902

This table gives cross-reference parts and alternative options found for IRLMS1902. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLMS1902, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRLMS1902PBF Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6 Infineon Technologies AG IRLMS1902 vs IRLMS1902PBF
IRLMS1902PBF Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6 International Rectifier IRLMS1902 vs IRLMS1902PBF
IRLMS1902TR Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 International Rectifier IRLMS1902 vs IRLMS1902TR
IRLMS1902TR Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 Infineon Technologies AG IRLMS1902 vs IRLMS1902TR
IRLMS1902TRPBF Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 International Rectifier IRLMS1902 vs IRLMS1902TRPBF
IRLMS1902 Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 Infineon Technologies AG IRLMS1902 vs IRLMS1902
Part Number Description Manufacturer Compare
IRF9956 Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRLMS1902 vs IRF9956
IRF9956 Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG IRLMS1902 vs IRF9956
IRF9956TR Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Infineon Technologies AG IRLMS1902 vs IRF9956TR
IRF9956PBF Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG IRLMS1902 vs IRF9956PBF
IRF9956TR Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA International Rectifier IRLMS1902 vs IRF9956TR
IRLMS1902TR Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 Infineon Technologies AG IRLMS1902 vs IRLMS1902TR
IRLMS1902 Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 Infineon Technologies AG IRLMS1902 vs IRLMS1902
IRLMS1902PBF Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6 Infineon Technologies AG IRLMS1902 vs IRLMS1902PBF
IRF9956TRPBF Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier IRLMS1902 vs IRF9956TRPBF
IRLMS1902TR Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 International Rectifier IRLMS1902 vs IRLMS1902TR

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