Part Details for IRLMS1902 by International Rectifier
Overview of IRLMS1902 by International Rectifier
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRLMS1902
Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | HEXFET Power MOSFET | 41000 |
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RFQ |
Part Details for IRLMS1902
IRLMS1902 CAD Models
IRLMS1902 Part Data Attributes
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IRLMS1902
International Rectifier
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Datasheet
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IRLMS1902
International Rectifier
Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | |
Package Description | SMALL OUTLINE, R-PDSO-G6 | |
Pin Count | 6 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | HIGH RELIABILITY | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 3.2 A | |
Drain-source On Resistance-Max | 0.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 18 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRLMS1902
This table gives cross-reference parts and alternative options found for IRLMS1902. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLMS1902, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRLMS1902PBF | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6 | Infineon Technologies AG | IRLMS1902 vs IRLMS1902PBF |
IRLMS1902PBF | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6 | International Rectifier | IRLMS1902 vs IRLMS1902PBF |
IRLMS1902TR | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 | International Rectifier | IRLMS1902 vs IRLMS1902TR |
IRLMS1902TR | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 | Infineon Technologies AG | IRLMS1902 vs IRLMS1902TR |
IRLMS1902TRPBF | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 | International Rectifier | IRLMS1902 vs IRLMS1902TRPBF |
IRLMS1902 | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 | Infineon Technologies AG | IRLMS1902 vs IRLMS1902 |