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Part Details for IRLMS1902TRPBF by Infineon Technologies AG
Overview of IRLMS1902TRPBF by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRLMS1902TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
39AH8956
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Newark | Mosfet, N-Ch, 20V, Sot-23-6, Transistor Polarity:N Channel, Continuous Drain Current Id:3.2A, Drain Source Voltage Vds:20V, On Resistance Rds(On):0.1Ohm, Rds(On) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:700Mv, Power Dissipation Rohs Compliant: Yes |Infineon IRLMS1902TRPBF Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
70017855
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RS | MOSFET, Power, N-Ch, VDSS 20V, RDS(ON) 0.1Ohm, ID 3.2A, Micro6 (SOT-23),PD 1.7W,-55C | Infineon IRLMS1902TRPBF RoHS: Not Compliant Min Qty: 50 Package Multiple: 1 Container: Bulk | 0 |
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$0.2350 / $0.2760 | RFQ |
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Bristol Electronics | 6593 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 3.2A I(D), 20V, 0.1OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 5274 |
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$0.2154 / $0.6155 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 3.2A I(D), 20V, 0.1OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 1481 |
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$0.2462 / $0.6155 | Buy Now |
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Rochester Electronics | IRLMS1902 - Planar <=40V RoHS: Compliant Status: Obsolete Min Qty: 1 | 51143 |
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$0.1539 / $0.1811 | Buy Now |
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DISTI #
IRLMS1902TRPBF
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TME | Transistor: N-MOSFET, unipolar, 20V, 3.2A, 1.7W, TSOP6 Min Qty: 3000 | 0 |
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$0.1220 | RFQ |
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DISTI #
3155159
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element14 Asia-Pacific | RoHS: Compliant Min Qty: 5 Container: Cut Tape | 0 |
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$0.5152 | Buy Now |
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DISTI #
3155159RL
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element14 Asia-Pacific | RoHS: Compliant Min Qty: 5 Container: Reel | 0 |
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$0.5152 | Buy Now |
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DISTI #
3155159
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Farnell | MOSFET, N-CH, 20V, SOT-23-6 RoHS: Compliant Min Qty: 5 Lead time: 40 Weeks, 1 Days Container: Cut Tape | 0 |
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$0.1125 | Buy Now |
Part Details for IRLMS1902TRPBF
IRLMS1902TRPBF CAD Models
IRLMS1902TRPBF Part Data Attributes
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IRLMS1902TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLMS1902TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | MICRO-6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 52 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | HIGH RELIABILITY | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 3.2 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRLMS1902TRPBF
This table gives cross-reference parts and alternative options found for IRLMS1902TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLMS1902TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRLMS1902PBF | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6 | Infineon Technologies AG | IRLMS1902TRPBF vs IRLMS1902PBF |
| IRLMS1902TRPBF | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 | International Rectifier | IRLMS1902TRPBF vs IRLMS1902TRPBF |
| IRLMS1902 | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 | Infineon Technologies AG | IRLMS1902TRPBF vs IRLMS1902 |
| IRLMS1902PBF | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, MICRO-6 | International Rectifier | IRLMS1902TRPBF vs IRLMS1902PBF |
| IRLMS1902TR | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6 | International Rectifier | IRLMS1902TRPBF vs IRLMS1902TR |