Datasheets
IRLR024NTRLPBF by:

Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

Part Details for IRLR024NTRLPBF by Infineon Technologies AG

Overview of IRLR024NTRLPBF by Infineon Technologies AG

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Medical Imaging Automotive Robotics and Drones

Price & Stock for IRLR024NTRLPBF

Part # Distributor Description Stock Price Buy
DISTI # 39AH8958
Newark Mosfet, N-Ch, 55V, 17A, 175Deg C, 45W, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:17A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon IRLR024NTRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 251
  • 1 $0.3810
$0.3810 Buy Now
DISTI # 86AK5411
Newark Mosfet, N-Ch, 55V, 17A, To-252Aa Rohs Compliant: Yes |Infineon IRLR024NTRLPBF RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 3,000 $0.3680
  • 6,000 $0.3590
  • 12,000 $0.3430
  • 18,000 $0.3430
  • 30,000 $0.3420
$0.3420 / $0.3680 Buy Now
DISTI # 448-IRLR024NTRLPBFCT-ND
DigiKey MOSFET N-CH 55V 17A DPAK Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) Limited Supply - Call
  • 1 $1.3800
  • 3,000 $0.3601
  • 6,000 $0.3341
  • 9,000 $0.3294
$0.3294 / $1.3800 Buy Now
DISTI # IRLR024NTRLPBF
Avnet Americas Trans MOSFET N-CH 55V 17A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRLR024NTRLPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 421 Partner Stock
RFQ
DISTI # 39AH8958
Avnet Americas Trans MOSFET N-CH 55V 17A 3-Pin(2+Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt: 39AH8958) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Ammo Pack 251 Partner Stock
  • 1 $0.9150
  • 10 $0.7480
  • 25 $0.6920
  • 50 $0.6360
  • 100 $0.5800
$0.5800 / $0.9150 Buy Now
DISTI # IRLR024NTRLPBF
Avnet Americas Trans MOSFET N-CH 55V 17A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRLR024NTRLPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
  • 3,000 $0.3104
$0.3104 Buy Now
DISTI # 942-IRLR024NTRLPBF
Mouser Electronics MOSFETs MOSFT 55V 17A 65mOhm 10nC Log Lvl RoHS: Compliant 5941
  • 1 $1.3500
  • 10 $0.8370
  • 100 $0.8060
  • 1,000 $0.7800
  • 3,000 $0.3720
  • 6,000 $0.3370
  • 9,000 $0.3290
$0.3290 / $1.3500 Buy Now
DISTI # 70017825
RS MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.065Ohm, ID 17A, D-Pak (TO-252AA),PD 45W | Infineon IRLR024NTRLPBF RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Container: Bulk 0
  • 25 $0.8200
  • 250 $0.7900
  • 1,250 $0.7500
  • 2,500 $0.7100
$0.7100 / $0.8200 RFQ
Future Electronics Single N-Channel 55 V 0.11 Ohm 15 nC HEXFET® Power Mosfet - TO-263-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks Container: Reel 0
Reel
  • 3,000 $0.3450
  • 6,000 $0.3400
  • 9,000 $0.3350
  • 12,000 $0.3300
  • 15,000 $0.3250
$0.3250 / $0.3450 Buy Now
Future Electronics Single N-Channel 55 V 0.11 Ohm 15 nC HEXFET® Power Mosfet - TO-263-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks Container: Reel 0
Reel
  • 3,000 $0.3450
  • 6,000 $0.3400
  • 9,000 $0.3350
  • 12,000 $0.3300
  • 15,000 $0.3250
$0.3250 / $0.3450 Buy Now
Future Electronics Single N-Channel 55 V 0.11 Ohm 15 nC HEXFET® Power Mosfet - TO-263-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks Container: Reel 0
Reel
  • 3,000 $0.3450
  • 6,000 $0.3400
  • 9,000 $0.3350
  • 12,000 $0.3300
  • 15,000 $0.3250
$0.3250 / $0.3450 Buy Now
Rochester Electronics IRLR024NTRLPBF - PLANAR 40<-<100V RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 421
  • 1 $0.3843
  • 25 $0.3766
  • 100 $0.3612
  • 500 $0.3459
  • 1,000 $0.3267
$0.3267 / $0.3843 Buy Now
DISTI # SP001568558
EBV Elektronik Trans MOSFET N-CH 55V 17A 3-Pin(2+Tab) DPAK T/R (Alt: SP001568558) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days EBV - 3000
Buy Now
LCSC 55V 17A 65m10A10V 45W 2V250uA 1 N-Channel DPAK MOSFETs ROHS 7
  • 1 $0.3675
  • 10 $0.3613
  • 30 $0.3565
  • 100 $0.3518
$0.3518 / $0.3675 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 3000 3000
  • 3,000 $0.4065
$0.4065 Buy Now
Win Source Electronics MOSFET N-CH 55V 17A DPAK 30022
  • 205 $0.2440
  • 500 $0.2000
  • 775 $0.1940
  • 1,065 $0.1880
  • 1,375 $0.1820
  • 1,845 $0.1630
$0.1630 / $0.2440 Buy Now

Part Details for IRLR024NTRLPBF

IRLR024NTRLPBF CAD Models

IRLR024NTRLPBF Part Data Attributes

IRLR024NTRLPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRLR024NTRLPBF Infineon Technologies AG Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Avalanche Energy Rating (Eas) 68 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 17 A
Drain-source On Resistance-Max 0.08 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 45 W
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLR024NTRLPBF

This table gives cross-reference parts and alternative options found for IRLR024NTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR024NTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRLR024NPBF Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG IRLR024NTRLPBF vs IRLR024NPBF
AUIRLR024N Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 International Rectifier IRLR024NTRLPBF vs AUIRLR024N
IRLR024NTR Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRLR024NTRLPBF vs IRLR024NTR
IRLR024NTRRPBF Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG IRLR024NTRLPBF vs IRLR024NTRRPBF
IRLR024N Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Infineon Technologies AG IRLR024NTRLPBF vs IRLR024N
IRLR024NPBF Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRLR024NTRLPBF vs IRLR024NPBF
AUIRLR024NTRL Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 International Rectifier IRLR024NTRLPBF vs AUIRLR024NTRL
AUIRLR024N Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Infineon Technologies AG IRLR024NTRLPBF vs AUIRLR024N
AUIRLR024NTRL Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Infineon Technologies AG IRLR024NTRLPBF vs AUIRLR024NTRL
IRLR024NTRRPBF Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRLR024NTRLPBF vs IRLR024NTRRPBF
Part Number Description Manufacturer Compare
IRLR024NPBF Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG IRLR024NTRLPBF vs IRLR024NPBF
AUIRLR024NTRR Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 International Rectifier IRLR024NTRLPBF vs AUIRLR024NTRR
NDP5060LJ69Z Power Field-Effect Transistor, 26A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation IRLR024NTRLPBF vs NDP5060LJ69Z
NDP5060S62Z Power Field-Effect Transistor, 26A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation IRLR024NTRLPBF vs NDP5060S62Z
AUIRLR024NTRL Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Infineon Technologies AG IRLR024NTRLPBF vs AUIRLR024NTRL
IRLR024NTRPBF Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Infineon Technologies AG IRLR024NTRLPBF vs IRLR024NTRPBF
IRLR024NTR Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRLR024NTRLPBF vs IRLR024NTR
IRLR024NTRL Power Field-Effect Transistor, 17A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRLR024NTRLPBF vs IRLR024NTRL
AUIRLR024NTR Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 International Rectifier IRLR024NTRLPBF vs AUIRLR024NTR
STD20NF06L 24A, 60V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, ROHS COMPLIANT, DPAK-3 STMicroelectronics IRLR024NTRLPBF vs STD20NF06L

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