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Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
39AH8958
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Newark | Mosfet, N-Ch, 55V, 17A, 175Deg C, 45W, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:17A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon IRLR024NTRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 251 |
|
$0.3810 | Buy Now |
DISTI #
86AK5411
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Newark | Mosfet, N-Ch, 55V, 17A, To-252Aa Rohs Compliant: Yes |Infineon IRLR024NTRLPBF RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.3420 / $0.3680 | Buy Now |
DISTI #
448-IRLR024NTRLPBFCT-ND
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DigiKey | MOSFET N-CH 55V 17A DPAK Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Limited Supply - Call |
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$0.3294 / $1.3800 | Buy Now |
DISTI #
IRLR024NTRLPBF
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Avnet Americas | Trans MOSFET N-CH 55V 17A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRLR024NTRLPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 421 Partner Stock |
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RFQ | |
DISTI #
39AH8958
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Avnet Americas | Trans MOSFET N-CH 55V 17A 3-Pin(2+Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt: 39AH8958) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Ammo Pack | 251 Partner Stock |
|
$0.5800 / $0.9150 | Buy Now |
DISTI #
IRLR024NTRLPBF
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Avnet Americas | Trans MOSFET N-CH 55V 17A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRLR024NTRLPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
|
$0.3104 | Buy Now |
DISTI #
942-IRLR024NTRLPBF
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Mouser Electronics | MOSFETs MOSFT 55V 17A 65mOhm 10nC Log Lvl RoHS: Compliant | 5941 |
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$0.3290 / $1.3500 | Buy Now |
DISTI #
70017825
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RS | MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.065Ohm, ID 17A, D-Pak (TO-252AA),PD 45W | Infineon IRLR024NTRLPBF RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Container: Bulk | 0 |
|
$0.7100 / $0.8200 | RFQ |
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Future Electronics | Single N-Channel 55 V 0.11 Ohm 15 nC HEXFET® Power Mosfet - TO-263-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks Container: Reel | 0Reel |
|
$0.3250 / $0.3450 | Buy Now |
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Future Electronics | Single N-Channel 55 V 0.11 Ohm 15 nC HEXFET® Power Mosfet - TO-263-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks Container: Reel | 0Reel |
|
$0.3250 / $0.3450 | Buy Now |
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IRLR024NTRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLR024NTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 68 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 17 A | |
Drain-source On Resistance-Max | 0.08 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 45 W | |
Pulsed Drain Current-Max (IDM) | 72 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRLR024NTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR024NTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRLR024NPBF | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | IRLR024NTRLPBF vs IRLR024NPBF |
AUIRLR024N | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRLR024NTRLPBF vs AUIRLR024N |
IRLR024NTR | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRLR024NTRLPBF vs IRLR024NTR |
IRLR024NTRRPBF | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | IRLR024NTRLPBF vs IRLR024NTRRPBF |
IRLR024N | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Infineon Technologies AG | IRLR024NTRLPBF vs IRLR024N |
IRLR024NPBF | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRLR024NTRLPBF vs IRLR024NPBF |
AUIRLR024NTRL | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRLR024NTRLPBF vs AUIRLR024NTRL |
AUIRLR024N | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | IRLR024NTRLPBF vs AUIRLR024N |
AUIRLR024NTRL | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | IRLR024NTRLPBF vs AUIRLR024NTRL |
IRLR024NTRRPBF | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRLR024NTRLPBF vs IRLR024NTRRPBF |