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Overview of IRLR3114ZTRL by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for IRLR3114ZTRL by Infineon Technologies AG
Part Data Attributes for IRLR3114ZTRL by Infineon Technologies AG
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Part Life Cycle Code
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Active
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Ihs Manufacturer
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INFINEON TECHNOLOGIES AG
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Package Description
|
PLASTIC, DPAK-3
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Reach Compliance Code
|
compliant
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ECCN Code
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EAR99
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Additional Feature
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AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
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Avalanche Energy Rating (Eas)
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260 mJ
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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40 V
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Drain Current-Max (ID)
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42 A
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Drain-source On Resistance-Max
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0.0065 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-252AA
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JESD-30 Code
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R-PSSO-G2
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Number of Elements
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1
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Number of Terminals
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2
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Operating Mode
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ENHANCEMENT MODE
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Polarity/Channel Type
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N-CHANNEL
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Pulsed Drain Current-Max (IDM)
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500 A
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Form
|
GULL WING
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Terminal Position
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SINGLE
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Alternate Parts for IRLR3114ZTRL
This table gives cross-reference parts and alternative options found for IRLR3114ZTRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR3114ZTRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRLR3114Z | Power Field-Effect Transistor, 42A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRLR3114ZTRL vs IRLR3114Z |
IRLR3114ZPBF | Power Field-Effect Transistor, 42A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRLR3114ZTRL vs IRLR3114ZPBF |
IRLR3114ZTRLPBF | Power Field-Effect Transistor, 42A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRLR3114ZTRL vs IRLR3114ZTRLPBF |
IRLR3114ZTR | Power Field-Effect Transistor, 42A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRLR3114ZTRL vs IRLR3114ZTR |
AUIRLR3114ZTRL | Power Field-Effect Transistor, 42A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRLR3114ZTRL vs AUIRLR3114ZTRL |
IRLR3114ZTRRPBF | Power Field-Effect Transistor, 42A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRLR3114ZTRL vs IRLR3114ZTRRPBF |
AUIRLR3114ZTRR | Power Field-Effect Transistor, 42A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | IRLR3114ZTRL vs AUIRLR3114ZTRR |
IRLR3114ZTRLPBF | Power Field-Effect Transistor, 42A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRLR3114ZTRL vs IRLR3114ZTRLPBF |
IRLR3114ZTRRPBF | Power Field-Effect Transistor, 42A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRLR3114ZTRL vs IRLR3114ZTRRPBF |
IRLR3114Z | Power Field-Effect Transistor, 42A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Infineon Technologies AG | IRLR3114ZTRL vs IRLR3114Z |