Datasheets
IRLR7811W by:

Power Field-Effect Transistor, 64A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3

Part Details for IRLR7811W by International Rectifier

Overview of IRLR7811W by International Rectifier

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Price & Stock for IRLR7811W

Part # Distributor Description Stock Price Buy
Bristol Electronics   670
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Part Details for IRLR7811W

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IRLR7811W Part Data Attributes

IRLR7811W International Rectifier
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IRLR7811W International Rectifier Power Field-Effect Transistor, 64A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-252AA
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 140 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 64 A
Drain-source On Resistance-Max 0.01 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 71 W
Pulsed Drain Current-Max (IDM) 260 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLR7811W

This table gives cross-reference parts and alternative options found for IRLR7811W. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR7811W, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRLR7811WTRPBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRLR7811W vs IRLR7811WTRPBF
IRLR7811WTR Power Field-Effect Transistor, 64A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRLR7811W vs IRLR7811WTR
IRLR7811WTRLPBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRLR7811W vs IRLR7811WTRLPBF
IRLR7811WTRL Power Field-Effect Transistor, 64A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRLR7811W vs IRLR7811WTRL
IRLR7811WTRR Power Field-Effect Transistor, 64A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRLR7811W vs IRLR7811WTRR
IRLR7811WPBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRLR7811W vs IRLR7811WPBF
Part Number Description Manufacturer Compare
H7N0310LMTL-E 30A, 30V, 0.019ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 Renesas Electronics Corporation IRLR7811W vs H7N0310LMTL-E
IRLR7811WTRPBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRLR7811W vs IRLR7811WTRPBF
IRLR7811WCTRRPBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, D-PAK, 3 PIN International Rectifier IRLR7811W vs IRLR7811WCTRRPBF
IPB096N03LGATMA1 Power Field-Effect Transistor, 35A I(D), 30V, 0.0141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IRLR7811W vs IPB096N03LGATMA1
IRLR7811WCPBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, D-PAK, 3 PIN International Rectifier IRLR7811W vs IRLR7811WCPBF
IPB080N03LGATMA1 Power Field-Effect Transistor, 48A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IRLR7811W vs IPB080N03LGATMA1
IRLR8729PBF Power Field-Effect Transistor, 50A I(D), 30V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 International Rectifier IRLR7811W vs IRLR8729PBF
IRLR7811WTRR Power Field-Effect Transistor, 64A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRLR7811W vs IRLR7811WTRR
IRLR7811WTR Power Field-Effect Transistor, 64A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRLR7811W vs IRLR7811WTR
IRLR7811WTRRPBF Power Field-Effect Transistor, 30A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRLR7811W vs IRLR7811WTRRPBF

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