Datasheets
IRLR7843TRPBF by:
Infineon Technologies AG

Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

Part Details for IRLR7843TRPBF by Infineon Technologies AG

Results Overview of IRLR7843TRPBF by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy Automotive

IRLR7843TRPBF Information

IRLR7843TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRLR7843TRPBF

Part # Distributor Description Stock Price Buy
DISTI # 42Y0443
Newark Mosfet Transistor, N Channel, 161 A, 30 V, 0.0026 Ohm, 10 V, 2.3 V Rohs Compliant: Yes |Infineon IRLR7843TRPBF RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 886
  • 1 $0.9250
  • 10 $0.8640
$0.8640 / $0.9250 Buy Now
DISTI # 26AC0696
Newark Trench_Mosfets Rohs Compliant: Yes |Infineon IRLR7843TRPBF RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $0.6830
  • 4,000 $0.6700
  • 8,000 $0.6690
$0.6690 / $0.6830 Buy Now
DISTI # 86AK5425
Newark Mosfet, N-Ch, 30V, 161A, To-252Aa Rohs Compliant: Yes |Infineon IRLR7843TRPBF RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 2,000 $0.6490
  • 4,000 $0.6260
  • 8,000 $0.6090
$0.6090 / $0.6490 Buy Now
DISTI # IRLR7843TRPBF
Avnet Americas Power MOSFET, N Channel, 30 V, 161 A, 0.0026 ohm, TO-252AA, Surface Mount - Tape and Reel (Alt: IRLR7843TRPBF) COO: Israel RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 26 Weeks, 0 Days Container: Reel 0
  • 2,000 $0.3384
  • 4,000 $0.3335
  • 8,000 $0.3317
  • 12,000 $0.3300
  • 16,000 $0.3283
$0.3283 / $0.3384 Buy Now
DISTI # 70017418
RS MOSFET, POWER, N-CH, VDSS 30V, RDS(ON) 2.6 MILLIOHMS, ID 161A, D-PAK (TO-252AA),VF 1V Min Qty: 10 Package Multiple: 1 Container: Bulk 0
  • 10 $2.5700
  • 50 $2.4300
  • 100 $2.3000
  • 1,000 $2.1600
  • 2,500 $2.0200
$2.0200 / $2.5700 RFQ
Rochester Electronics Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant Status: Active Min Qty: 1 7500
  • 100 $0.5627
  • 500 $0.5064
  • 1,000 $0.4670
  • 10,000 $0.4164
  • 100,000 $0.3489
$0.3489 / $0.5627 Buy Now
DISTI # IRLR7843TRPBF
TME Transistor: N-MOSFET, unipolar, 30V, 161A, 140W, DPAK Min Qty: 1 1106
  • 1 $0.7400
  • 5 $0.6800
  • 10 $0.6700
$0.6700 / $0.7400 Buy Now
DISTI # IRLR7843TRPBF
Chip One Stop Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape 790
  • 1 $0.4680
  • 10 $0.4510
  • 50 $0.4470
  • 100 $0.4050
  • 200 $0.3970
  • 500 $0.3600
$0.3600 / $0.4680 Buy Now
Chip Stock Mosfet,Power, N-ch, Vdss30V, Rds(on)2.6MILLIOHMS, Id161A, D-pak(TO-252AA), Vf1V 49500
RFQ
DISTI # SP001569090
EBV Elektronik Power MOSFET N Channel 30 V 161 A 00026 ohm TO252AA Surface Mount (Alt: SP001569090) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 27 Weeks, 0 Days EBV - 0
Buy Now
LCSC 30V 161A 3.3m10V 140W 2.3V250uA 1 N-Channel TO-252 Single FETs MOSFETs RoHS 4955
  • 1 $0.7687
  • 10 $0.6137
  • 30 $0.5378
  • 100 $0.4603
  • 500 $0.4154
  • 1,000 $0.3921
$0.3921 / $0.7687 Buy Now
DISTI # IRLR7843TRPBF
Maritex MOSFET Devices, INFINEON, IRLR7843TRPBF, 30 V, 161 A, 20 V, 140 W Min Qty: 1 Package Multiple: 1 20000
  • 1 $0.6490
$0.6490 Buy Now
Win Source Electronics MOSFET N-CH 30V 161A DPAK 45290
  • 110 $0.4650
  • 230 $0.4350
  • 360 $0.4200
  • 515 $0.3900
  • 670 $0.3750
  • 835 $0.3600
$0.3600 / $0.4650 Buy Now

Part Details for IRLR7843TRPBF

IRLR7843TRPBF CAD Models

IRLR7843TRPBF Part Data Attributes

IRLR7843TRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRLR7843TRPBF Infineon Technologies AG Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code Not Compliant
ECCN Code EAR99
Factory Lead Time 13 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 1440 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.0033 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 430 pF
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 140 W
Pulsed Drain Current-Max (IDM) 620 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRLR7843TRPBF

This table gives cross-reference parts and alternative options found for IRLR7843TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR7843TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRLR7843PBF International Rectifier Check for Price Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 IRLR7843TRPBF vs IRLR7843PBF
IRLR7843PBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 IRLR7843TRPBF vs IRLR7843PBF
IRLR7843 International Rectifier Check for Price Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 IRLR7843TRPBF vs IRLR7843
IRLR7843TRLPBF International Rectifier Check for Price Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 IRLR7843TRPBF vs IRLR7843TRLPBF
IRLR7843 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 IRLR7843TRPBF vs IRLR7843
IRLR7843TRLPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 IRLR7843TRPBF vs IRLR7843TRLPBF
IRLR7843TRPBF International Rectifier Check for Price Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 IRLR7843TRPBF vs IRLR7843TRPBF
IRLR7843TRRPBF International Rectifier Check for Price Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 IRLR7843TRPBF vs IRLR7843TRRPBF
equivalents icon

IRLR7843TRPBF Related Parts

IRLR7843TRPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRLR7843TRPBF is -55°C to 150°C.

  • The recommended PCB footprint for the IRLR7843TRPBF is a 5x5mm QFN package with a 0.5mm pitch.

  • To ensure proper soldering, use a reflow soldering process with a peak temperature of 260°C for 10-30 seconds. Use a solder paste with a melting point of 217°C.

  • The maximum current rating for the IRLR7843TRPBF is 78A.

  • To protect the IRLR7843TRPBF from ESD, handle the device in an ESD-protected environment, use ESD-protective packaging, and follow proper handling and storage procedures.

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