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Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRLR7843TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
42Y0443
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Newark | Mosfet Transistor, N Channel, 161 A, 30 V, 0.0026 Ohm, 10 V, 2.3 V Rohs Compliant: Yes |Infineon IRLR7843TRPBF RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 886 |
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$0.8640 / $0.9250 | Buy Now |
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DISTI #
26AC0696
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Newark | Trench_Mosfets Rohs Compliant: Yes |Infineon IRLR7843TRPBF RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.6690 / $0.6830 | Buy Now |
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DISTI #
86AK5425
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Newark | Mosfet, N-Ch, 30V, 161A, To-252Aa Rohs Compliant: Yes |Infineon IRLR7843TRPBF RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.6090 / $0.6490 | Buy Now |
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DISTI #
IRLR7843TRPBF
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Avnet Americas | Power MOSFET, N Channel, 30 V, 161 A, 0.0026 ohm, TO-252AA, Surface Mount - Tape and Reel (Alt: IRLR7843TRPBF) COO: Israel RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 26 Weeks, 0 Days Container: Reel | 0 |
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$0.3283 / $0.3384 | Buy Now |
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DISTI #
70017418
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RS | MOSFET, POWER, N-CH, VDSS 30V, RDS(ON) 2.6 MILLIOHMS, ID 161A, D-PAK (TO-252AA),VF 1V Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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$2.0200 / $2.5700 | RFQ |
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Rochester Electronics | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant Status: Active Min Qty: 1 | 7500 |
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$0.3489 / $0.5627 | Buy Now |
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DISTI #
IRLR7843TRPBF
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TME | Transistor: N-MOSFET, unipolar, 30V, 161A, 140W, DPAK Min Qty: 1 | 1106 |
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$0.6700 / $0.7400 | Buy Now |
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DISTI #
IRLR7843TRPBF
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Chip One Stop | Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 790 |
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$0.3600 / $0.4680 | Buy Now |
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Chip Stock | Mosfet,Power, N-ch, Vdss30V, Rds(on)2.6MILLIOHMS, Id161A, D-pak(TO-252AA), Vf1V | 49500 |
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RFQ | |
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DISTI #
SP001569090
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EBV Elektronik | Power MOSFET N Channel 30 V 161 A 00026 ohm TO252AA Surface Mount (Alt: SP001569090) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 27 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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IRLR7843TRPBF
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRLR7843TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 1440 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.0033 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 430 pF | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 140 W | |
| Pulsed Drain Current-Max (IDM) | 620 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRLR7843TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR7843TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRLR7843PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | IRLR7843TRPBF vs IRLR7843PBF |
| IRLR7843PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | IRLR7843TRPBF vs IRLR7843PBF |
| IRLR7843 | International Rectifier | Check for Price | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | IRLR7843TRPBF vs IRLR7843 |
| IRLR7843TRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | IRLR7843TRPBF vs IRLR7843TRLPBF |
| IRLR7843 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | IRLR7843TRPBF vs IRLR7843 |
| IRLR7843TRLPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | IRLR7843TRPBF vs IRLR7843TRLPBF |
| IRLR7843TRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | IRLR7843TRPBF vs IRLR7843TRPBF |
| IRLR7843TRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | IRLR7843TRPBF vs IRLR7843TRRPBF |
The maximum operating temperature range for the IRLR7843TRPBF is -55°C to 150°C.
The recommended PCB footprint for the IRLR7843TRPBF is a 5x5mm QFN package with a 0.5mm pitch.
To ensure proper soldering, use a reflow soldering process with a peak temperature of 260°C for 10-30 seconds. Use a solder paste with a melting point of 217°C.
The maximum current rating for the IRLR7843TRPBF is 78A.
To protect the IRLR7843TRPBF from ESD, handle the device in an ESD-protected environment, use ESD-protective packaging, and follow proper handling and storage procedures.