Part Details for IRLR8256TRPBF by Infineon Technologies AG
Overview of IRLR8256TRPBF by Infineon Technologies AG
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for IRLR8256TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
13AC9243
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Newark | Mosfet, N-Ch, 25V, 81A, To-252Aa, Transistor Polarity:N Channel, Continuous Drain Current Id:81A, Drain Source Voltage Vds:25V, On Resistance Rds(On):0.0042Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Rohs Compliant: Yes |Infineon IRLR8256TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
IRLR8256TRPBF
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TME | Transistor: N-MOSFET, unipolar, 25V, 81A, 63W, DPAK Min Qty: 2000 | 0 |
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$0.3490 | RFQ |
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DISTI #
2726023RL
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element14 Asia-Pacific | MOSFET, N-CH, 25V, 81A, TO-252AA RoHS: Compliant Min Qty: 100 Container: Reel | 0 |
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$0.3240 / $0.4827 | Buy Now |
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DISTI #
2726023
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element14 Asia-Pacific | MOSFET, N-CH, 25V, 81A, TO-252AA RoHS: Compliant Min Qty: 1 Container: Cut Tape | 0 |
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$0.3240 / $0.7192 | Buy Now |
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DISTI #
2726023RL
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Farnell | MOSFET, N-CH, 25V, 81A, TO-252AA RoHS: Compliant Min Qty: 10 Lead time: 51 Weeks, 1 Days Container: Reel | 0 |
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$0.8155 | Buy Now |
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DISTI #
2726023
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Farnell | MOSFET, N-CH, 25V, 81A, TO-252AA RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Cut Tape | 0 |
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$0.8155 / $1.0777 | Buy Now |
Part Details for IRLR8256TRPBF
IRLR8256TRPBF CAD Models
IRLR8256TRPBF Part Data Attributes
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IRLR8256TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRLR8256TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 52 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 86 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 81 A | |
| Drain-source On Resistance-Max | 0.0057 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 63 W | |
| Pulsed Drain Current-Max (IDM) | 325 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRLR8256TRPBF
This table gives cross-reference parts and alternative options found for IRLR8256TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRLR8256TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRLR8256TRPBF | Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRLR8256TRPBF vs IRLR8256TRPBF |
| IRLR8256TR | Power Field-Effect Transistor, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRLR8256TRPBF vs IRLR8256TR |
| IRLR8256 | Power Field-Effect Transistor, TO-252AA, PLASTIC, DPAK-3 | Infineon Technologies AG | IRLR8256TRPBF vs IRLR8256 |
| IRLR8256PBF | Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRLR8256TRPBF vs IRLR8256PBF |
| IRLR8256TRLPBF | Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRLR8256TRPBF vs IRLR8256TRLPBF |
| IRLR8256TRL | Power Field-Effect Transistor, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRLR8256TRPBF vs IRLR8256TRL |
| IRLR8256TRRPBF | Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRLR8256TRPBF vs IRLR8256TRRPBF |