There are no models available for this part yet.
Overview of ISL9N310AD3ST by Rochester Electronics LLC
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 5 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 5 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for ISL9N310AD3ST by Rochester Electronics LLC
Part Data Attributes for ISL9N310AD3ST by Rochester Electronics LLC
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|---|---|
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Pbfree Code
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Yes
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Part Life Cycle Code
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Active
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Ihs Manufacturer
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ROCHESTER ELECTRONICS LLC
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Reach Compliance Code
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unknown
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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30 V
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Drain Current-Max (ID)
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35 A
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Drain-source On Resistance-Max
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0.015 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-252AA
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JESD-30 Code
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R-PSSO-G2
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Moisture Sensitivity Level
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NOT SPECIFIED
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Number of Elements
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1
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Number of Terminals
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2
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Operating Mode
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ENHANCEMENT MODE
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Peak Reflow Temperature (Cel)
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NOT SPECIFIED
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Polarity/Channel Type
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N-CHANNEL
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Qualification Status
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COMMERCIAL
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Surface Mount
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YES
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Terminal Finish
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NOT SPECIFIED
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Terminal Form
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GULL WING
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Terminal Position
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SINGLE
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Time@Peak Reflow Temperature-Max (s)
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NOT SPECIFIED
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Alternate Parts for ISL9N310AD3ST
This table gives cross-reference parts and alternative options found for ISL9N310AD3ST. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ISL9N310AD3ST, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDD8880_NL | Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, D2PAK-3 | Fairchild Semiconductor Corporation | ISL9N310AD3ST vs FDD8880_NL |
| ISL9N310AD3ST | 35A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | ISL9N310AD3ST vs ISL9N310AD3ST |
| ISL9N310AD3ST_NL | 35A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Rochester Electronics LLC | ISL9N310AD3ST vs ISL9N310AD3ST_NL |
| FDD8880_NL | 35A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, LEAD FREE, D2PAK-3 | Rochester Electronics LLC | ISL9N310AD3ST vs FDD8880_NL |
| FDD8880 | Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Fairchild Semiconductor Corporation | ISL9N310AD3ST vs FDD8880 |
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