Datasheets
ITE25C12 by: Dynex Semiconductor

Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel

Part Details for ITE25C12 by Dynex Semiconductor

Overview of ITE25C12 by Dynex Semiconductor

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Applications Industrial Automation Renewable Energy Robotics and Drones

Part Details for ITE25C12

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ITE25C12 Part Data Attributes

ITE25C12 Dynex Semiconductor
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ITE25C12 Dynex Semiconductor Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer GEC PLESSEY SEMICONDUCTORS
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 25 A
Collector-Emitter Voltage-Max 1200 V
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JESD-609 Code e0
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 100 W
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)

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