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Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN
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IXDP20N60B
Littelfuse Inc
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Datasheet
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IXDP20N60B
Littelfuse Inc
Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | HIGH SPEED | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 32 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | MOTOR CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 315 ns | |
Turn-on Time-Nom (ton) | 55 ns |
This table gives cross-reference parts and alternative options found for IXDP20N60B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXDP20N60B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
GT15H101 | TRANSISTOR 15 A, 500 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | IXDP20N60B vs GT15H101 |
IRGBC30FD2 | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IXDP20N60B vs IRGBC30FD2 |
IRGPC50U | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC | International Rectifier | IXDP20N60B vs IRGPC50U |
HGTD7N60C3S9A | 14A,600V, UFS Series N-Channel IGBTs, 2500-REEL | onsemi | IXDP20N60B vs HGTD7N60C3S9A |
IRG4BC20W-STRLPBF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IXDP20N60B vs IRG4BC20W-STRLPBF |
IXGH36N60A3D4 | Insulated Gate Bipolar Transistor, | Littelfuse Inc | IXDP20N60B vs IXGH36N60A3D4 |
IRG4PH50UD | Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | IXDP20N60B vs IRG4PH50UD |
HGTG10N120BND | 1200V, NPT IGBT, 450-TUBE | onsemi | IXDP20N60B vs HGTG10N120BND |
HGTP12N60C3DR | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Fairchild Semiconductor Corporation | IXDP20N60B vs HGTP12N60C3DR |
IXGH12N60BD1 | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXDP20N60B vs IXGH12N60BD1 |