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Distributor | Stock | MOQ | Package | QTY Break / Prices |
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View this part on Newark | 0 | 25 | Bulk |
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Purchasing Risk Rank is determined by in-depth analysis across risk factors of production risk and long term risk of a given part.
IXFH120N15P
Yes
Active
FLANGE MOUNT, R-PSFM-T3
compliant
EAR99
Littelfuse Inc
7.2
AVALANCHE ENERGY RATED
2000 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
150 V
120 A
0.016 Ω
METAL-OXIDE SEMICONDUCTOR
TO-247AD
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
175 °C
PLASTIC/EPOXY
RECTANGULAR
Design Risk Rank is determined by in-depth analysis across risk factors, including part availability, functional equivalents, lifecycle, and more.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IXFT120N15P Transistors | Power Field-Effect Transistor, 120A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | IXFH120N15P vs IXFT120N15P |