Part Details for IXFH18N100Q3 by IXYS Corporation
Overview of IXFH18N100Q3 by IXYS Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXFH18N100Q3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
76Y3353
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Newark | Mosfet, N-Ch, 1Kv, 18A, To-247, Channel Type:N Channel, Drain Source Voltage Vds:1Kv, Continuous Drain Current Id:18A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:6.5V Rohs Compliant: Yes |Ixys Semiconductor IXFH18N100Q3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$16.2100 / $21.2800 | Buy Now |
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DISTI #
IXFH18N100Q3-ND
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DigiKey | MOSFET N-CH 1000V 18A TO247AD Min Qty: 1 Lead time: 46 Weeks Container: Tube |
399 In Stock |
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$14.1296 / $20.4600 | Buy Now |
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DISTI #
747-IXFH18N100Q3
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Mouser Electronics | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A RoHS: Compliant | 0 |
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$14.1200 / $20.4500 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Container: Tube | 0Tube |
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$14.1300 | Buy Now |
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DISTI #
IXFH18N100Q3
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TTI | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$13.9800 / $14.9500 | Buy Now |
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DISTI #
IXFH18N100Q3
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TME | Transistor: N-MOSFET, unipolar, 1kV, 18A, 830W, TO247-3 Min Qty: 1 | 0 |
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$13.4500 / $16.6500 | RFQ |
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Chips Pulse Industry Limited | TO-247AD(IXFH) MOSFETs ROHS Purchase Online, Ship Immediately | 36 |
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$16.2554 / $17.2678 | Buy Now |
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DISTI #
2470016
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element14 Asia-Pacific | MOSFET, N CHANNEL, 1KV, 18A, TO-247 RoHS: Compliant Min Qty: 1 Container: Each | 572 |
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$17.8121 / $21.6185 | Buy Now |
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DISTI #
2470016
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Farnell | MOSFET, N CHANNEL, 1KV, 18A, TO-247 RoHS: Compliant Min Qty: 1 Lead time: 40 Weeks, 1 Days Container: Each | 572 |
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$15.2201 / $20.3807 | Buy Now |
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LCSC | 1kV 18A 660m9A10V 830W 6.5V4mA 1PCSNChannel TO-247AD(IXFH) MOSFETs ROHS | 30 |
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$18.0616 / $19.1864 | Buy Now |
Part Details for IXFH18N100Q3
IXFH18N100Q3 CAD Models
IXFH18N100Q3 Part Data Attributes
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IXFH18N100Q3
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFH18N100Q3
IXYS Corporation
Power Field-Effect Transistor, 18A I(D), 1000V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-247 | |
| Package Description | PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.66 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 830 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFH18N100Q3
This table gives cross-reference parts and alternative options found for IXFH18N100Q3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH18N100Q3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFV18N90PS | Power Field-Effect Transistor, 18A I(D), 900V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220SMD, 3 PIN | IXYS Corporation | IXFH18N100Q3 vs IXFV18N90PS |
| APT20M18B2VFRG | Power Field-Effect Transistor, 100A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | Microchip Technology Inc | IXFH18N100Q3 vs APT20M18B2VFRG |
| IXFT18N100Q3 | Power Field-Effect Transistor, | Littelfuse Inc | IXFH18N100Q3 vs IXFT18N100Q3 |
| IXFT18N90P | Power Field-Effect Transistor, 18A I(D), 900V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN | Littelfuse Inc | IXFH18N100Q3 vs IXFT18N90P |
| APT20M18LVFRG | Power Field-Effect Transistor, 100A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | Microchip Technology Inc | IXFH18N100Q3 vs APT20M18LVFRG |
| APT20M18LVRG | Power Field-Effect Transistor, 100A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | Microchip Technology Inc | IXFH18N100Q3 vs APT20M18LVRG |
| IXFH18N100Q3 | Power Field-Effect Transistor, | Littelfuse Inc | IXFH18N100Q3 vs IXFH18N100Q3 |