Part Details for IXFH36N55Q by IXYS Corporation
Overview of IXFH36N55Q by IXYS Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Medical Imaging
Robotics and Drones
Price & Stock for IXFH36N55Q
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXFH36N55Q
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Mouser Electronics | MOSFETs 36 Amps 550V 0.16 Rds RoHS: Compliant | 0 |
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Part Details for IXFH36N55Q
IXFH36N55Q CAD Models
IXFH36N55Q Part Data Attributes
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IXFH36N55Q
IXYS Corporation
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Datasheet
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IXFH36N55Q
IXYS Corporation
Power Field-Effect Transistor, 36A I(D), 550V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-247AD | |
| Package Description | TO-247AD, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 2 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 550 V | |
| Drain Current-Max (ID) | 36 A | |
| Drain-source On Resistance-Max | 0.16 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 148 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFH36N55Q
This table gives cross-reference parts and alternative options found for IXFH36N55Q. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH36N55Q, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2SK1549R | Power Field-Effect Transistor, 20A I(D), 250V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Fuji Electric Co Ltd | IXFH36N55Q vs 2SK1549R |
| 2SK2108 | Power Field-Effect Transistor, 6A I(D), 250V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ML, 3 PIN | SANYO Electric Co Ltd | IXFH36N55Q vs 2SK2108 |
| 2SK2142 | 12A, 250V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | onsemi | IXFH36N55Q vs 2SK2142 |
| 2SK3468-01 | Power Field-Effect Transistor, 14A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Fuji Electric Co Ltd | IXFH36N55Q vs 2SK3468-01 |
| 2SK3415LS | Power Field-Effect Transistor, 40A I(D), 60V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI(LS), 3 PIN | SANYO Electric Co Ltd | IXFH36N55Q vs 2SK3415LS |
| APT5020BVFRG | Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Microsemi Corporation | IXFH36N55Q vs APT5020BVFRG |
| 2SK3823 | Power Field-Effect Transistor, 40A I(D), 60V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | SANYO Semiconductor Co Ltd | IXFH36N55Q vs 2SK3823 |
| 2SK4191LS | Power Field-Effect Transistor, 4.8A I(D), 400V, 1.56ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI, 3 PIN | SANYO Electric Co Ltd | IXFH36N55Q vs 2SK4191LS |
| 2SK890 | TRANSISTOR 10 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | Toshiba America Electronic Components | IXFH36N55Q vs 2SK890 |
| 2SK2678LS | Power Field-Effect Transistor, 1.5A I(D), 600V, 5.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220FI, 3 PIN | SANYO Electric Co Ltd | IXFH36N55Q vs 2SK2678LS |