Part Details for IXFK24N80P by Littelfuse Inc
Overview of IXFK24N80P by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFK24N80P
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH0654
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Newark | Discmosfetn-Ch Hiperfet-Polar To-264(3)/ Tube |Littelfuse IXFK24N80P RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$7.2600 / $7.8100 | Buy Now |
DISTI #
IXFK24N80P-ND
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DigiKey | MOSFET N-CH 800V 24A TO264AA Min Qty: 300 Lead time: 46 Weeks Container: Tube | Temporarily Out of Stock |
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$8.6708 | Buy Now |
Part Details for IXFK24N80P
IXFK24N80P CAD Models
IXFK24N80P Part Data Attributes
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IXFK24N80P
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFK24N80P
Littelfuse Inc
Power Field-Effect Transistor, 24A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 1500 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 24 A | |
Drain-source On Resistance-Max | 0.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-264AA | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 650 W | |
Pulsed Drain Current-Max (IDM) | 55 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXFK24N80P
This table gives cross-reference parts and alternative options found for IXFK24N80P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFK24N80P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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APT24M80S | Power Field-Effect Transistor, 25A I(D), 800V, 0.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D3PAK-3 | Microsemi Corporation | IXFK24N80P vs APT24M80S |
IXFT23N80Q | Power Field-Effect Transistor, 23A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN | IXYS Corporation | IXFK24N80P vs IXFT23N80Q |
IXFT24N80P | Power Field-Effect Transistor, 24A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN | Littelfuse Inc | IXFK24N80P vs IXFT24N80P |
IXFH23N80Q | Power Field-Effect Transistor, 23A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | Littelfuse Inc | IXFK24N80P vs IXFH23N80Q |
APT22F80S | Power Field-Effect Transistor, 23A I(D), 800V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFK24N80P vs APT22F80S |
APT22F80B | Power Field-Effect Transistor, 23A I(D), 800V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Microchip Technology Inc | IXFK24N80P vs APT22F80B |
IXFH24N80P | Power Field-Effect Transistor, 24A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | IXYS Corporation | IXFK24N80P vs IXFH24N80P |
IXFT23N80Q | Power Field-Effect Transistor, 23A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | IXFK24N80P vs IXFT23N80Q |
IXFH24N80P | Power Field-Effect Transistor, 24A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | Littelfuse Inc | IXFK24N80P vs IXFH24N80P |
APT24M80B | Power Field-Effect Transistor, 25A I(D), 800V, 0.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | Microchip Technology Inc | IXFK24N80P vs APT24M80B |