Datasheets
IXFK32N100Q3 by:

Power Field-Effect Transistor, 32A I(D), 1000V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN

Part Details for IXFK32N100Q3 by IXYS Corporation

Overview of IXFK32N100Q3 by IXYS Corporation

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Price & Stock for IXFK32N100Q3

Part # Distributor Description Stock Price Buy
DISTI # 747-IXFK32N100Q3
Mouser Electronics MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/32A RoHS: Compliant 200
  • 1 $38.7500
  • 10 $36.3100
  • 25 $32.3200
  • 50 $31.6900
  • 100 $30.7300
$30.7300 / $38.7500 Buy Now
Future Electronics N-Channel 1000 V 320 mOhm 195 nC 1250 W Power MOSFET - TO-264 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 25 Container: Tube 0
Tube
  • 1 $32.8000
  • 4 $32.3800
  • 15 $31.9900
  • 40 $31.7000
  • 100 $31.2400
$31.2400 / $32.8000 Buy Now
Future Electronics N-Channel 1000 V 320 mOhm 195 nC 1250 W Power MOSFET - TO-264 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 25 Container: Tube 0
Tube
  • 25 $33.4200
  • 50 $33.2200
  • 75 $33.1000
  • 100 $33.0100
  • 125 $32.7500
$32.7500 / $33.4200 Buy Now
Bristol Electronics   225
RFQ
DISTI # IXFK32N100Q3
TTI MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/32A Min Qty: 300 Package Multiple: 25 Container: Tube Americas - 0
  • 300 $32.9500
  • 500 $32.3000
  • 1,000 $31.6700
$31.6700 / $32.9500 Buy Now
DISTI # IXFK32N100Q3
TME Transistor: N-MOSFET, unipolar, 1kV, 32A, 1250W, TO264 Min Qty: 1 0
  • 1 $33.0500
  • 3 $29.2500
  • 10 $26.2200
  • 25 $24.4900
$24.4900 / $33.0500 RFQ
Chip1Cloud HiperFET Power MOSFETs Q3-Class | MOSFET N-CH 1000V 32A TO-264 20000
RFQ
Perfect Parts Corporation   158
RFQ

Part Details for IXFK32N100Q3

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IXFK32N100Q3 Part Data Attributes:

IXFK32N100Q3 IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXFK32N100Q3 IXYS Corporation Power Field-Effect Transistor, 32A I(D), 1000V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC, TO-264, 3 PIN
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-264AA
Package Description PLASTIC, TO-264, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 2000 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 32 A
Drain-source On Resistance-Max 0.32 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 67 pF
JEDEC-95 Code TO-264AA
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1250 W
Pulsed Drain Current-Max (IDM) 96 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFK32N100Q3

This table gives cross-reference parts and alternative options found for IXFK32N100Q3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFK32N100Q3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXFK32N100Q3 Power Field-Effect Transistor, Littelfuse Inc IXFK32N100Q3 vs IXFK32N100Q3
IXFK32N100P Power Field-Effect Transistor, 32A I(D), 1000V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN IXYS Corporation IXFK32N100Q3 vs IXFK32N100P
Part Number Description Manufacturer Compare
IXFK32N100P Power Field-Effect Transistor, 32A I(D), 1000V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN IXYS Corporation IXFK32N100Q3 vs IXFK32N100P
APT34F100L Power Field-Effect Transistor, 35A I(D), 1000V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA Microchip Technology Inc IXFK32N100Q3 vs APT34F100L
IXFX32N100Q3 Power Field-Effect Transistor, 32A I(D), 1000V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN IXYS Corporation IXFK32N100Q3 vs IXFX32N100Q3
IXFX32N100P Power Field-Effect Transistor, 32A I(D), 1000V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN IXYS Corporation IXFK32N100Q3 vs IXFX32N100P
APT34F100B2 Power Field-Effect Transistor, 35A I(D), 1000V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB Microchip Technology Inc IXFK32N100Q3 vs APT34F100B2
APT31M100B2 Power Field-Effect Transistor, 32A I(D), 1000V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TMAX-3 Microsemi Corporation IXFK32N100Q3 vs APT31M100B2

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