Part Details for IXFK66N85X by IXYS Corporation
Overview of IXFK66N85X by IXYS Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IXFK66N85X
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
IXFK66N85X-ND
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DigiKey | MOSFET N-CH 850V 66A TO264 Min Qty: 1 Lead time: 32 Weeks Container: Tube | Temporarily Out of Stock |
|
$17.9591 / $27.0800 | Buy Now |
|
DISTI #
747-IXFK66N85X
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Mouser Electronics | MOSFET 850V Ultra Junction X-Class Pwr MOSFET RoHS: Compliant | 0 |
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$27.0800 | Order Now |
|
|
Future Electronics | MOSFET 850V Ultra Junction X-Class Pwr RoHS: Compliant pbFree: Yes Min Qty: 25 Package Multiple: 25 Container: Tube | 0Tube |
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$20.3100 / $20.7300 | Buy Now |
|
DISTI #
IXFK66N85X
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TTI | MOSFET 850V Ultra Junction X-Class Pwr MOSFET Min Qty: 300 Package Multiple: 25 Container: Tube | Americas - 0 |
|
$18.3100 / $20.7100 | Buy Now |
|
DISTI #
IXFK66N85X
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TME | Transistor: N-MOSFET, unipolar, 850V, 66A, 1250W, TO264, 250ns Min Qty: 1 | 0 |
|
$20.0800 / $27.1300 | RFQ |
Part Details for IXFK66N85X
IXFK66N85X CAD Models
IXFK66N85X Part Data Attributes
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IXFK66N85X
IXYS Corporation
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Datasheet
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IXFK66N85X
IXYS Corporation
Power Field-Effect Transistor,
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 2500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 850 V | |
| Drain Current-Max (ID) | 66 A | |
| Drain-source On Resistance-Max | 0.065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 142 pF | |
| JEDEC-95 Code | TO-264AA | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1250 W | |
| Pulsed Drain Current-Max (IDM) | 140 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |