Part Details for IXFN130N30 by IXYS Corporation
Overview of IXFN130N30 by IXYS Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFN130N30
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38K3181
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Newark | N Channel Mosfet, 300V, 130A, Sot-227B, Channel Type:N Channel, Drain Source Voltage Vds:300V, Continuous Drain Current Id:130A, Transistor Mounting:Module, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Ixys Semiconductor IXFN130N30 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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DISTI #
IXFN130N30-ND
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DigiKey | MOSFET N-CH 300V 130A SOT-227B Min Qty: 300 Lead time: 43 Weeks Container: Tube | Temporarily Out of Stock |
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$29.9625 | Buy Now |
Part Details for IXFN130N30
IXFN130N30 CAD Models
IXFN130N30 Part Data Attributes
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IXFN130N30
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFN130N30
IXYS Corporation
Power Field-Effect Transistor, 130A I(D), 300V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | FLANGE MOUNT, R-PUFM-X4 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 4000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 300 V | |
| Drain Current-Max (ID) | 130 A | |
| Drain-source On Resistance-Max | 0.022 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 700 W | |
| Pulsed Drain Current-Max (IDM) | 520 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | NICKEL | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFN130N30
This table gives cross-reference parts and alternative options found for IXFN130N30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFN130N30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFN160N30T | Power Field-Effect Transistor, 130A I(D), 300V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | IXYS Corporation | IXFN130N30 vs IXFN160N30T |
| APT30M19JVFR | Power Field-Effect Transistor, 130A I(D), 300V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFN130N30 vs APT30M19JVFR |
| IXFN170N30P | Power Field-Effect Transistor, 138A I(D), 300V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFN130N30 vs IXFN170N30P |