Datasheets
IXFN132N50P3 by:

Power Field-Effect Transistor, 112A I(D), 500V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4

Part Details for IXFN132N50P3 by IXYS Corporation

Overview of IXFN132N50P3 by IXYS Corporation

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Price & Stock for IXFN132N50P3

Part # Distributor Description Stock Price Buy
DISTI # 03AH0716
Newark Discmsft Nchhiperfetpolar3 Sot-227B(Mini/ Tube Rohs Compliant: Yes |Ixys Semiconductor IXFN132N50P3 Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $30.3400
$30.3400 Buy Now
DISTI # 02AC9813
Newark Mosfet Module, N-Ch, 500V, 112A, Sot-227, Transistor Polarity:N Channel, Continuous Drain Current Id:112A, Drain Source Voltage Vds:500V, On Resistance Rds(On):0.039Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:5V, Power Rohs Compliant: Yes |Ixys Semiconductor IXFN132N50P3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $39.8800
  • 5 $38.3300
  • 10 $36.7900
  • 25 $35.0000
  • 50 $33.2000
  • 100 $31.4200
$31.4200 / $39.8800 Buy Now
DISTI # IXFN132N50P3-ND
DigiKey MOSFET N-CH 500V 112A SOT227B Min Qty: 1 Lead time: 26 Weeks Container: Tube 275
In Stock
  • 1 $41.8600
  • 10 $37.3020
  • 100 $32.7417
$32.7417 / $41.8600 Buy Now
DISTI # 747-IXFN132N50P3
Mouser Electronics Discrete Semiconductor Modules 500V 112A 0.039Ohm PolarP3 Power MOSFET RoHS: Compliant 723
  • 1 $42.7100
  • 10 $36.3000
  • 20 $35.0700
  • 50 $33.9000
  • 100 $32.7300
  • 200 $30.7300
$30.7300 / $42.7100 Buy Now
Future Electronics Single N-Channel 500 V 1500 W 267 nC Chassis Mount Power Mosfet - SOT227 RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Container: Tube 180
Tube
  • 10 $29.8600
  • 20 $29.6700
  • 40 $29.4800
  • 50 $29.4200
  • 150 $29.0400
$29.0400 / $29.8600 Buy Now
Future Electronics Single N-Channel 500 V 1500 W 267 nC Chassis Mount Power Mosfet - SOT227 RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Container: Tube 20
Tube
  • 10 $31.4900
  • 20 $31.2900
  • 40 $31.0900
  • 50 $31.0200
  • 150 $30.6300
$30.6300 / $31.4900 Buy Now
DISTI # IXFN132N50P3
TTI Discrete Semiconductor Modules 500V 112A 0.039Ohm PolarP3 Power MOSFET Min Qty: 300 Package Multiple: 10 Container: Tube Americas - 0
  • 300 $29.6200
$29.6200 Buy Now
DISTI # IXFN132N50P3
TME Module, single transistor, 500V, 112A, SOT227B, screw, Idm: 330A Min Qty: 1 3
  • 1 $37.7900
  • 3 $33.4000
  • 10 $29.9700
$29.9700 / $37.7900 Buy Now
Ameya Holding Limited   Min Qty: 1 22
  • 1 $50.6374
  • 3 $50.1315
  • 15 $48.6282
$48.6282 / $50.6374 Buy Now
DISTI # 2674760
element14 Asia-Pacific MOSFET MODULE, N-CH, 500V, 112A, SOT-227 RoHS: Compliant Min Qty: 1 Container: Each 20
  • 1 $43.8793
  • 5 $39.9576
  • 10 $36.0285
  • 50 $34.8337
  • 100 $33.6242
$33.6242 / $43.8793 Buy Now
DISTI # 2674760
Farnell MOSFET MODULE, N-CH, 500V, 112A, SOT-227 RoHS: Compliant Min Qty: 1 Lead time: 40 Weeks, 1 Days Container: Each 20
  • 1 $40.1918
  • 5 $38.0041
  • 10 $35.8164
  • 50 $34.3912
  • 100 $32.9535
$32.9535 / $40.1918 Buy Now
New Advantage Corporation Single N-Channel 500 V 1500 W 267 nC Chassis Mount Power Mosfet - SOT227 RoHS: Compliant Min Qty: 1 Package Multiple: 10 160
  • 10 $42.0300
  • 160 $39.2300
$39.2300 / $42.0300 Buy Now

Part Details for IXFN132N50P3

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IXFN132N50P3 Part Data Attributes

IXFN132N50P3 IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXFN132N50P3 IXYS Corporation Power Field-Effect Transistor, 112A I(D), 500V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Package Description MINIBLOC-4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 3000 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 112 A
Drain-source On Resistance-Max 0.039 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1500 W
Pulsed Drain Current-Max (IDM) 330 A
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFN132N50P3

This table gives cross-reference parts and alternative options found for IXFN132N50P3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFN132N50P3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXFN132N50P3 Power Field-Effect Transistor, Littelfuse Inc IXFN132N50P3 vs IXFN132N50P3
Part Number Description Manufacturer Compare
APT100M50J Power Field-Effect Transistor, 103A I(D), 500V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOTOP-4 Microsemi Corporation IXFN132N50P3 vs APT100M50J
APT100M50J Power Field-Effect Transistor, 103A I(D), 500V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc IXFN132N50P3 vs APT100M50J
IXFN132N50P3 Power Field-Effect Transistor, Littelfuse Inc IXFN132N50P3 vs IXFN132N50P3

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