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Power Field-Effect Transistor, 150A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH0725
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Newark | Discmsft N-Ch Hiperfet-Polasot-227B(Mini/ Tube |Littelfuse IXFN180N15P Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$19.0100 / $28.6600 | Buy Now |
DISTI #
IXFN180N15P-ND
|
DigiKey | MOSFET N-CH 150V 150A SOT-227B Min Qty: 1 Lead time: 44 Weeks Container: Tube |
2077 In Stock |
|
$18.6520 / $28.1200 | Buy Now |
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IXFN180N15P
Littelfuse Inc
Buy Now
Datasheet
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IXFN180N15P
Littelfuse Inc
Power Field-Effect Transistor, 150A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 4000 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 150 V | |
Drain Current-Max (ID) | 150 A | |
Drain-source On Resistance-Max | 0.011 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PUFM-X4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 380 A | |
Qualification Status | Not Qualified | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Finish | NICKEL | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |