Part Details for IXFN24N100 by IXYS Corporation
Overview of IXFN24N100 by IXYS Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFN24N100
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
14J1684
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Newark | Mosfet, N, Sot-227B, Channel Type:N Channel, Drain Source Voltage Vds:1Kv, Continuous Drain Current Id:24A, Transistor Mounting:Module, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5.5V, Power Dissipation:600W, Msl:- Rohs Compliant: Yes |Ixys Semiconductor IXFN24N100 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 213 |
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$40.9800 / $50.5000 | Buy Now |
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DISTI #
IXFN24N100-ND
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DigiKey | MOSFET N-CH 1KV 24A SOT-227B Min Qty: 300 Lead time: 46 Weeks Container: Tube | Limited Supply - Call |
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$34.3702 | Buy Now |
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DISTI #
747-IXFN24N100
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Mouser Electronics | Discrete Semiconductor Modules 1KV 24A RoHS: Compliant | 0 |
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$39.4000 / $48.5600 | Order Now |
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Future Electronics | Single N-Channel 1000 Vds 390 mOhm 600 W Power Mosfet - SOT-227B RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Container: Tube | 0Tube |
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$33.7000 / $34.6400 | Buy Now |
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DISTI #
IXFN24N100
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TTI | Discrete Semiconductor Modules 1KV 24A Min Qty: 300 Package Multiple: 10 Container: Tube | Americas - 0 |
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$34.3700 | Buy Now |
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DISTI #
IXFN24N100
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TME | Module, single transistor, 1kV, 24A, SOT227B, screw, Idm: 96A, 568W Min Qty: 1 | 0 |
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$39.9600 / $50.4100 | RFQ |
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Ameya Holding Limited | Min Qty: 10 | 6 |
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$51.1979 / $52.7814 | Buy Now |
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DISTI #
4905568
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Farnell | MOSFET, N, SOT-227B RoHS: Compliant Min Qty: 1 Lead time: 40 Weeks, 1 Days Container: Each | 213 |
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$43.9099 / $54.6957 | Buy Now |
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New Advantage Corporation | MOSFET MOD.24A 1000V N-CH SOT227B HIPERFET CHASSIS RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 321 |
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$73.7400 / $79.0100 | Buy Now |
Part Details for IXFN24N100
IXFN24N100 CAD Models
IXFN24N100 Part Data Attributes
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IXFN24N100
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFN24N100
IXYS Corporation
Power Field-Effect Transistor, 24A I(D), 1000V, 0.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | PLASTIC, MINIBLOC-4 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 3000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 24 A | |
| Drain-source On Resistance-Max | 0.39 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 600 W | |
| Pulsed Drain Current-Max (IDM) | 96 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Finish | NICKEL | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFN24N100
This table gives cross-reference parts and alternative options found for IXFN24N100. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFN24N100, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STE15N100 | 15A, 1000V, 0.77ohm, N-CHANNEL, Si, POWER, MOSFET, POWER, ISOTOP-4 | STMicroelectronics | IXFN24N100 vs STE15N100 |
| APT10045JLL | Power Field-Effect Transistor, 21A I(D), 1000V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Microsemi Corporation | IXFN24N100 vs APT10045JLL |
| APT10050LVFR | Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN | Microsemi Corporation | IXFN24N100 vs APT10050LVFR |
| IXFN21N100Q | Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | IXYS Corporation | IXFN24N100 vs IXFN21N100Q |
| STE24NA100 | 24A, 1000V, 0.385ohm, N-CHANNEL, Si, POWER, MOSFET | STMicroelectronics | IXFN24N100 vs STE24NA100 |
| IXFK21N100Q | Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 | IXYS Corporation | IXFN24N100 vs IXFK21N100Q |