Part Details for IXFN360N10T by IXYS Corporation
Overview of IXFN360N10T by IXYS Corporation
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXFN360N10T
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
37AC0717
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Newark | Mosfet Module, N-Ch, 100V, 360A, Transistor Polarity:N Channel, Continuous Drain Current Id:360A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.0026Ohm, Rds(On) Test Voltage Vgs:100V, Threshold Voltage Vgs:4.5V, Power Rohs Compliant: Yes |Ixys Semiconductor IXFN360N10T Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$22.3700 / $28.7900 | Buy Now |
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DISTI #
747-IXFN360N10T
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Mouser Electronics | Discrete Semiconductor Modules 360 Amps 100V | 234 |
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$21.5100 / $28.2500 | Buy Now |
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Future Electronics | Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 10 Lead time: 27 Weeks Container: Tube | 0Tube |
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$21.0900 | Buy Now |
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Future Electronics | Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 10 Lead time: 27 Weeks Container: Tube | 0Tube |
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$21.0900 | Buy Now |
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DISTI #
IXFN360N10T
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TTI | Discrete Semiconductor Modules 360 Amps 100V Min Qty: 10 Package Multiple: 10 Container: Tube |
Americas - 20 In Stock |
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$23.6700 / $25.1200 | Buy Now |
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DISTI #
IXFN360N10T
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TME | Module, single transistor, 100V, 360A, SOT227B, screw, Idm: 900A Min Qty: 1 | 0 |
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$22.6800 / $28.4800 | RFQ |
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Ameya Holding Limited | Min Qty: 10 | 2175 |
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$27.5027 / $30.1647 | Buy Now |
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New Advantage Corporation | MOSFET MOD.360A 100V N-CH SOT227B HIPERFET CHASSIS RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 3968 |
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$41.8400 / $44.8300 | Buy Now |
Part Details for IXFN360N10T
IXFN360N10T CAD Models
IXFN360N10T Part Data Attributes
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IXFN360N10T
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFN360N10T
IXYS Corporation
Power Field-Effect Transistor, 360A I(D), 100V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | MINIBLOC-4 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 2000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 360 A | |
| Drain-source On Resistance-Max | 0.0026 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 830 W | |
| Pulsed Drain Current-Max (IDM) | 900 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Finish | Nickel (Ni) | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFN360N10T
This table gives cross-reference parts and alternative options found for IXFN360N10T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFN360N10T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXUN350N10 | Power Field-Effect Transistor, 350A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFN360N10T vs IXUN350N10 |
| IXUN280N10 | Power Field-Effect Transistor, 280A I(D), 100V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFN360N10T vs IXUN280N10 |