Part Details for IXFN50N80Q2 by Littelfuse Inc
Overview of IXFN50N80Q2 by Littelfuse Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IXFN50N80Q2
IXFN50N80Q2 CAD Models
IXFN50N80Q2 Part Data Attributes
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IXFN50N80Q2
Littelfuse Inc
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Datasheet
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IXFN50N80Q2
Littelfuse Inc
Power Field-Effect Transistor, 50A I(D), 800V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | FLANGE MOUNT, R-XUFM-X4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 5000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 890 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Finish | NICKEL | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFN50N80Q2
This table gives cross-reference parts and alternative options found for IXFN50N80Q2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFN50N80Q2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APT8020JLL | Power Field-Effect Transistor, 33A I(D), 800V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFN50N80Q2 vs APT8020JLL |
| IXFN34N80 | Power Field-Effect Transistor, 34A I(D), 800V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFN50N80Q2 vs IXFN34N80 |
| IXFN50N80Q2 | Power Field-Effect Transistor, 50A I(D), 800V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFN50N80Q2 vs IXFN50N80Q2 |
| IXKN45N80C | Power Field-Effect Transistor, 44A I(D), 800V, 0.074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFN50N80Q2 vs IXKN45N80C |
| APT8024JLL | Power Field-Effect Transistor, 29A I(D), 800V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFN50N80Q2 vs APT8024JLL |
| APT8015JVFR | Power Field-Effect Transistor, 44A I(D), 800V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Microsemi Corporation | IXFN50N80Q2 vs APT8015JVFR |
| APT8015JVFR | Power Field-Effect Transistor, 44A I(D), 800V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFN50N80Q2 vs APT8015JVFR |
| APT8015JVR | Power Field-Effect Transistor, 44A I(D), 800V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFN50N80Q2 vs APT8015JVR |
| APT8024JLL | Power Field-Effect Transistor, 29A I(D), 800V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Microsemi Corporation | IXFN50N80Q2 vs APT8024JLL |
| IXFN44N80 | Power Field-Effect Transistor, 44A I(D), 800V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFN50N80Q2 vs IXFN44N80 |