Part Details for IXFN520N075T2 by IXYS Corporation
Overview of IXFN520N075T2 by IXYS Corporation
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IXFN520N075T2
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
747-IXFN520N075T2
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Mouser Electronics | MOSFET Modules GigaMOS Trench T2 HiperFET PWR MOSFET RoHS: Compliant | 284 |
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$22.5100 / $34.7400 | Buy Now |
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Future Electronics | N-Channel 75 V 940 W 545 nC TranchT2 HiperFET Power MosFet SMT - SOT-227 RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 10 Container: Tube | 0Tube |
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$25.6300 / $26.3700 | Buy Now |
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Future Electronics | N-Channel 75 V 940 W 545 nC TranchT2 HiperFET Power MosFet SMT - SOT-227 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 10 Container: Tube | 0Tube |
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$25.6300 / $26.3700 | Buy Now |
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DISTI #
IXFN520N075T2
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TTI | MOSFET Modules GigaMOS Trench T2 HiperFET PWR MOSFET Min Qty: 10 Package Multiple: 10 Container: Tube |
Americas - 1460 In Stock |
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$30.0300 | Buy Now |
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DISTI #
IXFN520N075T2
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TME | Module, single transistor, 75V, 480A, SOT227B, screw, Idm: 1.5kA Min Qty: 1 | 0 |
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$27.2900 / $34.3900 | RFQ |
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New Advantage Corporation | MOSFET MOD.480A 75V N-CH SOT227B TRENCHT2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 22 |
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$55.1000 / $59.0400 | Buy Now |
Part Details for IXFN520N075T2
IXFN520N075T2 CAD Models
IXFN520N075T2 Part Data Attributes
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IXFN520N075T2
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFN520N075T2
IXYS Corporation
Power Field-Effect Transistor, 480A I(D), 75V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINI BLOC, 4 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | PLASTIC, MINI BLOC, 4 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 3000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 75 V | |
| Drain Current-Max (ID) | 480 A | |
| Drain-source On Resistance-Max | 0.0019 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 940 W | |
| Pulsed Drain Current-Max (IDM) | 1500 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Finish | Nickel (Ni) | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |