Datasheets
IXFP36N20X3M by:

Power Field-Effect Transistor,

Part Details for IXFP36N20X3M by Littelfuse Inc

Overview of IXFP36N20X3M by Littelfuse Inc

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Price & Stock for IXFP36N20X3M

Part # Distributor Description Stock Price Buy
DISTI # 03AH0824
Newark Mosfet, N-Ch, 200V, 36A, To-220, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:36A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Littelfuse IXFP36N20X3M Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 300
  • 1 $4.6700
  • 10 $4.3500
  • 25 $4.0200
  • 50 $3.7000
  • 100 $3.1700
  • 500 $2.8200
  • 1,000 $2.4100
  • 2,500 $2.2800
$2.2800 / $4.6700 Buy Now

Part Details for IXFP36N20X3M

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IXFP36N20X3M Part Data Attributes

IXFP36N20X3M Littelfuse Inc
Buy Now Datasheet
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IXFP36N20X3M Littelfuse Inc Power Field-Effect Transistor,
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 300 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 36 A
Drain-source On Resistance-Max 0.045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 1.2 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 36 W
Pulsed Drain Current-Max (IDM) 50 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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