Part Details for IXFP4N100P by IXYS Corporation
Overview of IXFP4N100P by IXYS Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFP4N100P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFP4N100P-ND
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DigiKey | MOSFET N-CH 1000V 4A TO220AB Min Qty: 300 Lead time: 46 Weeks Container: Tube | Temporarily Out of Stock |
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$2.5564 | Buy Now |
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DISTI #
747-IXFP4N100P
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Mouser Electronics | MOSFET 4 Amps 1000V RoHS: Compliant | 0 |
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$2.2700 / $2.5500 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 50 Container: Tube | 0Tube |
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$2.1800 | Buy Now |
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DISTI #
IXFP4N100P
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TTI | MOSFET 4 Amps 1000V Min Qty: 300 Package Multiple: 50 Container: Tube | Americas - 0 |
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$2.2000 / $2.5200 | Buy Now |
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DISTI #
IXFP4N100P
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TME | Transistor: N-MOSFET, unipolar, 1kV, 4A, 150W, TO220AB Min Qty: 1 | 0 |
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$2.3400 / $3.2500 | RFQ |
Part Details for IXFP4N100P
IXFP4N100P CAD Models
IXFP4N100P Part Data Attributes
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IXFP4N100P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFP4N100P
IXYS Corporation
Power Field-Effect Transistor, 4A I(D), 1000V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 3.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFP4N100P
This table gives cross-reference parts and alternative options found for IXFP4N100P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFP4N100P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFT4N100Q | Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN | IXYS Corporation | IXFP4N100P vs IXFT4N100Q |
| IXFA4N100P-TRL | Power Field-Effect Transistor, | Littelfuse Inc | IXFP4N100P vs IXFA4N100P-TRL |
| IXFP4N100P | Power Field-Effect Transistor, 4A I(D), 1000V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Littelfuse Inc | IXFP4N100P vs IXFP4N100P |
| APT1003RSLL | Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 | Microsemi Corporation | IXFP4N100P vs APT1003RSLL |
| IXFA4N100Q | Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Littelfuse Inc | IXFP4N100P vs IXFA4N100Q |
| APT1003RKLL | Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Microsemi Corporation | IXFP4N100P vs APT1003RKLL |
| IXFA4N100P | Power Field-Effect Transistor, 4A I(D), 1000V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Littelfuse Inc | IXFP4N100P vs IXFA4N100P |
| IXFT4N100Q | Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | IXFP4N100P vs IXFT4N100Q |
| APT1003RSFLLG | Power Field-Effect Transistor, 4A I(D), 1000V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFP4N100P vs APT1003RSFLLG |
| IXFA4N100P | Power Field-Effect Transistor, 4A I(D), 1000V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | IXYS Corporation | IXFP4N100P vs IXFA4N100P |