Part Details for IXFR20N80P by Littelfuse Inc
Overview of IXFR20N80P by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFR20N80P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH0882
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Newark | Discmosfetn-Ch Hiperfet-Polar Isoplus247/ Tube |Littelfuse IXFR20N80P Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$7.4500 / $8.0200 | Buy Now |
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DISTI #
IXFR20N80P-ND
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DigiKey | MOSFET N-CH 800V 11A ISOPLUS247 Min Qty: 300 Lead time: 46 Weeks Container: Tube | Temporarily Out of Stock |
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$8.0883 | Buy Now |
Part Details for IXFR20N80P
IXFR20N80P CAD Models
IXFR20N80P Part Data Attributes:
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IXFR20N80P
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFR20N80P
Littelfuse Inc
Power Field-Effect Transistor, 11A I(D), 800V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 28 pF | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 166 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFR20N80P
This table gives cross-reference parts and alternative options found for IXFR20N80P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFR20N80P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| TK12A80W | POWER, FET | Toshiba America Electronic Components | IXFR20N80P vs TK12A80W |
| SPA11N80C3XKSA1 | Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220FP, 3 PIN | Infineon Technologies AG | IXFR20N80P vs SPA11N80C3XKSA1 |
| IXFR20N80P | Power Field-Effect Transistor, 11A I(D), 800V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN | IXYS Corporation | IXFR20N80P vs IXFR20N80P |