Part Details for IXFR230N20T by IXYS Corporation
Overview of IXFR230N20T by IXYS Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFR230N20T
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXFR230N20T
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Mouser Electronics | MOSFETs GigaMOS Power MOSFET RoHS: Compliant | 0 |
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$18.2100 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube | 0Tube |
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$18.8700 | Buy Now |
DISTI #
IXFR230N20T
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TTI | MOSFETs GigaMOS Power MOSFET Min Qty: 300 Package Multiple: 30 Container: Tube | Americas - 0 |
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$18.0300 | Buy Now |
DISTI #
IXFR230N20T
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TME | Transistor: N-MOSFET, unipolar, 200V, 156A, 600W, ISOPLUS247™ Min Qty: 1 | 18 |
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$20.9400 / $29.0800 | Buy Now |
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New Advantage Corporation | MOSFET DIS.156A 200V N-CH ISOPLUS247 GIGAMOS RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 24 |
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$39.2700 / $42.0700 | Buy Now |
Part Details for IXFR230N20T
IXFR230N20T CAD Models
IXFR230N20T Part Data Attributes
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IXFR230N20T
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFR230N20T
IXYS Corporation
Power Field-Effect Transistor, 156A I(D), 200V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Package Description | PLASTIC, ISOPLUS247, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 3000 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 156 A | |
Drain-source On Resistance-Max | 0.008 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 600 W | |
Pulsed Drain Current-Max (IDM) | 630 A | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Finish | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXFR230N20T
This table gives cross-reference parts and alternative options found for IXFR230N20T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFR230N20T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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APT20M11JLL | Power Field-Effect Transistor, 176A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFR230N20T vs APT20M11JLL |
IXFR230N20T | Power Field-Effect Transistor, | Littelfuse Inc | IXFR230N20T vs IXFR230N20T |
APT20M11JVFR | Power Field-Effect Transistor, 175A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFR230N20T vs APT20M11JVFR |