Part Details for IXFR230N20T by Littelfuse Inc
Overview of IXFR230N20T by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IXFR230N20T
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH0884
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Newark | Discmsft Nchtrenchgate-Gen1 Isoplus247/ Tube |Littelfuse IXFR230N20T RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$16.8800 | Buy Now |
DISTI #
IXFR230N20T-ND
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DigiKey | MOSFET N-CH 200V 156A ISOPLUS247 Min Qty: 300 Lead time: 27 Weeks Container: Tube | Temporarily Out of Stock |
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$18.2110 | Buy Now |
Part Details for IXFR230N20T
IXFR230N20T CAD Models
IXFR230N20T Part Data Attributes
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IXFR230N20T
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXFR230N20T
Littelfuse Inc
Power Field-Effect Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 5000 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 156 A | |
Drain-source On Resistance-Max | 0.008 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 60 pF | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 600 W | |
Pulsed Drain Current-Max (IDM) | 630 A | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Finish | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXFR230N20T
This table gives cross-reference parts and alternative options found for IXFR230N20T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFR230N20T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
APT20M11JLL | Power Field-Effect Transistor, 176A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFR230N20T vs APT20M11JLL |
APT20M11JVFR | Power Field-Effect Transistor, 175A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFR230N20T vs APT20M11JVFR |
IXFR230N20T | Power Field-Effect Transistor, 156A I(D), 200V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN | IXYS Corporation | IXFR230N20T vs IXFR230N20T |