Datasheets
IXFR24N100Q3 by:

Power Field-Effect Transistor, 18A I(D), 1000V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN

Part Details for IXFR24N100Q3 by IXYS Corporation

Overview of IXFR24N100Q3 by IXYS Corporation

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Price & Stock for IXFR24N100Q3

Part # Distributor Description Stock Price Buy
DISTI # IXFR24N100Q3-ND
DigiKey MOSFET N-CH 1000V 18A ISOPLUS247 Min Qty: 1 Lead time: 46 Weeks Container: Tube 147
In Stock
  • 1 $31.3500
  • 30 $25.9857
  • 120 $24.3615
$24.3615 / $31.3500 Buy Now
DISTI # 747-IXFR24N100Q3
Mouser Electronics MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A RoHS: Compliant 18
  • 1 $31.3400
  • 10 $29.1300
  • 30 $25.9800
  • 60 $25.5300
  • 120 $24.3500
  • 270 $23.4100
$23.4100 / $31.3400 Buy Now
Future Electronics MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 300 Container: Tube 0
Tube
  • 30 $23.0700
  • 60 $22.9400
  • 90 $22.8600
  • 120 $22.8000
  • 150 $22.6200
$22.6200 / $23.0700 Buy Now
Future Electronics MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $23.0700
  • 60 $22.9400
  • 90 $22.8600
  • 120 $22.8000
  • 150 $22.6200
$22.6200 / $23.0700 Buy Now
DISTI # IXFR24N100Q3
TTI MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A Min Qty: 300 Package Multiple: 30 Container: Tube Americas - 0
  • 300 $23.1100
  • 510 $22.2000
$22.2000 / $23.1100 Buy Now
DISTI # IXFR24N100Q3
TME Transistor: N-MOSFET, unipolar, 1kV, 18A, 500W, ISOPLUS247™ Min Qty: 1 30
  • 1 $34.7400
  • 3 $31.3300
  • 10 $27.6000
  • 30 $24.8300
$24.8300 / $34.7400 Buy Now
Ameya Holding Limited   Min Qty: 1 7
  • 1 $36.5716
  • 8 $35.4757
  • 15 $34.4103
$34.4103 / $36.5716 Buy Now

Part Details for IXFR24N100Q3

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IXFR24N100Q3 Part Data Attributes

IXFR24N100Q3 IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXFR24N100Q3 IXYS Corporation Power Field-Effect Transistor, 18A I(D), 1000V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Package Description PLASTIC, ISOPLUS247, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 2000 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.49 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 500 W
Pulsed Drain Current-Max (IDM) 60 A
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Finish Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFR24N100Q3

This table gives cross-reference parts and alternative options found for IXFR24N100Q3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFR24N100Q3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXFR24N100Q3 Power Field-Effect Transistor, Littelfuse Inc IXFR24N100Q3 vs IXFR24N100Q3
Part Number Description Manufacturer Compare
APT19F100J Power Field-Effect Transistor, 20A I(D), 1000V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc IXFR24N100Q3 vs APT19F100J
APT10050JN Power Field-Effect Transistor, 20.5A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Advanced Power Technology IXFR24N100Q3 vs APT10050JN
IXFN21N100Q Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 Littelfuse Inc IXFR24N100Q3 vs IXFN21N100Q
APT10045JLL Power Field-Effect Transistor, 21A I(D), 1000V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc IXFR24N100Q3 vs APT10045JLL
IXFR21N100Q Power Field-Effect Transistor, 18A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN IXYS Corporation IXFR24N100Q3 vs IXFR21N100Q
APT10050JN 20.5A, 1000V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, ISOTOP-4 Microsemi Corporation IXFR24N100Q3 vs APT10050JN
IXFR40N90P Power Field-Effect Transistor, 21A I(D), 900V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS247, 3 PIN Littelfuse Inc IXFR24N100Q3 vs IXFR40N90P
APT10045JFLL Power Field-Effect Transistor, 21A I(D), 1000V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc IXFR24N100Q3 vs APT10045JFLL
IXFL44N100P Power Field-Effect Transistor, 22A I(D), 1000V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS, I5PAK-3 Littelfuse Inc IXFR24N100Q3 vs IXFL44N100P

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