Part Details for IXGH20N100 by IXYS Corporation
Overview of IXGH20N100 by IXYS Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXGH20N100
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXGH20N100-ND
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DigiKey | IGBT 1000V 40A 150W TO247 Lead time: 27 Weeks Container: Tube | Temporarily Out of Stock |
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Buy Now |
Part Details for IXGH20N100
IXGH20N100 CAD Models
IXGH20N100 Part Data Attributes
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IXGH20N100
IXYS Corporation
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Datasheet
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IXGH20N100
IXYS Corporation
Insulated Gate Bipolar Transistor, 40A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-247AD | |
| Package Description | TO-247AD, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 40 A | |
| Collector-Emitter Voltage-Max | 1000 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 2000 ns | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 30 V | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 200 ns | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 700 ns | |
| Turn-on Time-Nom (ton) | 30 ns |
Alternate Parts for IXGH20N100
This table gives cross-reference parts and alternative options found for IXGH20N100. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXGH20N100, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXXH50N60B3D1 | Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXGH20N100 vs IXXH50N60B3D1 |
| IXGT15N120C | Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-268AA, D3PAK-3 | IXYS Corporation | IXGH20N100 vs IXGT15N120C |
| IXGH36N60B3 | Insulated Gate Bipolar Transistor, 92A I(C), 600V V(BR)CES, N-Channel, | IXYS Corporation | IXGH20N100 vs IXGH36N60B3 |
| IXGH12N100U1 | Insulated Gate Bipolar Transistor, 20A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXGH20N100 vs IXGH12N100U1 |
| IXGA20N100 | Insulated Gate Bipolar Transistor, 40A I(C), 1000V V(BR)CES, N-Channel, TO-263AA, TO-263AA, 3 PIN | IXYS Corporation | IXGH20N100 vs IXGA20N100 |
| IXGP15N100C | Insulated Gate Bipolar Transistor, 30A I(C), 1000V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | IXYS Corporation | IXGH20N100 vs IXGP15N100C |
| IXGP4N100 | Insulated Gate Bipolar Transistor, 8A I(C), 1000V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | IXYS Corporation | IXGH20N100 vs IXGP4N100 |
| IXGA20N120 | Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-263AB, TO-263AA, 3 PIN | IXYS Corporation | IXGH20N100 vs IXGA20N120 |
| IXGH56N60B3 | Insulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel, TO-247AD, PLASTIC, TO-247, 3 PIN | IXYS Corporation | IXGH20N100 vs IXGH56N60B3 |
| IXGH48N60B3 | Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN | IXYS Corporation | IXGH20N100 vs IXGH48N60B3 |