Part Details for IXGR40N60CD1 by IXYS Corporation
Overview of IXGR40N60CD1 by IXYS Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXGR40N60CD1
Part # | Distributor | Description | Stock | Price | Buy | |
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New Advantage Corporation | IGBT DIS.DIODE SINGLE 35A 600V H.FAST ISOPLUS247 RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 133 |
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$6.3100 / $6.7600 | Buy Now |
Part Details for IXGR40N60CD1
IXGR40N60CD1 CAD Models
IXGR40N60CD1 Part Data Attributes
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IXGR40N60CD1
IXYS Corporation
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Datasheet
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IXGR40N60CD1
IXYS Corporation
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, ISOPLUS247, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | IXYS CORP | |
Part Package Code | TO-247AD | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Manufacturer Package Code | ISOPLUS | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 75 A | |
Collector-Emitter Voltage-Max | 600 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Fall Time-Max (tf) | 150 ns | |
Gate-Emitter Thr Voltage-Max | 5 V | |
Gate-Emitter Voltage-Max | 20 V | |
JEDEC-95 Code | TO-247AD | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 200 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 255 ns | |
Turn-on Time-Nom (ton) | 60 ns |
Alternate Parts for IXGR40N60CD1
This table gives cross-reference parts and alternative options found for IXGR40N60CD1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXGR40N60CD1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SGP13N60UF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | IXGR40N60CD1 vs SGP13N60UF |
HGT1S12N60B3S9A | Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB, | Fairchild Semiconductor Corporation | IXGR40N60CD1 vs HGT1S12N60B3S9A |
SGP5N60RUFD | Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220, TO-220, 3 PIN | Samsung Semiconductor | IXGR40N60CD1 vs SGP5N60RUFD |
IXGH38N60 | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | IXGR40N60CD1 vs IXGH38N60 |
HGTP1N120CN | Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-220AB | Fairchild Semiconductor Corporation | IXGR40N60CD1 vs HGTP1N120CN |
IXGH50N60B4 | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN | IXYS Corporation | IXGR40N60CD1 vs IXGH50N60B4 |
IRG4BC20FD-SPBF | Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IXGR40N60CD1 vs IRG4BC20FD-SPBF |
HGT1S3N60C3DS | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-263AB, TO-263AB, 3 PIN | Harris Semiconductor | IXGR40N60CD1 vs HGT1S3N60C3DS |
IRG4PC30UD | Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | IXGR40N60CD1 vs IRG4PC30UD |
HGTG30N60B3 | IGBT, 600V, PT, 450-TUBE | onsemi | IXGR40N60CD1 vs HGTG30N60B3 |