Datasheets
IXGR6N170A by:

Insulated Gate Bipolar Transistor, 5.5A I(C), 1700V V(BR)CES, N-Channel, TO-247AD, ISOPLUS247, 3 PIN

Part Details for IXGR6N170A by IXYS Corporation

Overview of IXGR6N170A by IXYS Corporation

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Price & Stock for IXGR6N170A

Part # Distributor Description Stock Price Buy
DISTI # IXGR6N170A-ND
DigiKey IGBT 1700V 5.5A 50W ISOPLUS247 Min Qty: 1 Lead time: 35 Weeks Container: Tube Temporarily Out of Stock
  • 1 $20.7500
  • 30 $16.7993
  • 120 $15.8111
  • 510 $14.3288
$14.3288 / $20.7500 Buy Now
DISTI # 747-IXGR6N170A
Mouser Electronics IGBT Modules High Voltage IGBTs RoHS: Compliant 0
  • 1 $20.7600
  • 30 $18.9900
  • 60 $16.8900
$16.8900 / $20.7600 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube 0
Tube
  • 30 $14.3300
$14.3300 Buy Now
DISTI # IXGR6N170A
TTI IGBT Modules High Voltage IGBTs Min Qty: 300 Package Multiple: 30 Container: Tube Americas - 0
  • 300 $16.3100
$16.3100 Buy Now

Part Details for IXGR6N170A

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IXGR6N170A Part Data Attributes

IXGR6N170A IXYS Corporation
Buy Now Datasheet
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IXGR6N170A IXYS Corporation Insulated Gate Bipolar Transistor, 5.5A I(C), 1700V V(BR)CES, N-Channel, TO-247AD, ISOPLUS247, 3 PIN
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-247AD
Package Description ISOPLUS247, 3 PIN
Pin Count 3
Manufacturer Package Code ISOPLUS
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection ISOLATED
Collector Current-Max (IC) 5.5 A
Collector-Emitter Voltage-Max 1700 V
Configuration SINGLE
Fall Time-Max (tf) 65 ns
Gate-Emitter Thr Voltage-Max 5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 50 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 271 ns
Turn-on Time-Nom (ton) 91 ns

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