Part Details for IXTA10N60P by Littelfuse Inc
Overview of IXTA10N60P by Littelfuse Inc
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXTA10N60P
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
03AH1271
|
Newark | Disc Mosfet N-Ch Std-Polar To-263D2/ Tube |Littelfuse IXTA10N60P RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$2.3400 / $3.1300 | Buy Now |
DISTI #
IXTA10N60P-ND
|
DigiKey | MOSFET N-CH 600V 10A TO263 Min Qty: 300 Lead time: 46 Weeks Container: Tube | Temporarily Out of Stock |
|
$3.0166 | Buy Now |
DISTI #
C1S425202087297
|
Chip1Stop | Disc Mosfet N-CH Std-Polar TO-263D2 | 50 |
|
$2.9900 | Buy Now |
Part Details for IXTA10N60P
IXTA10N60P CAD Models
IXTA10N60P Part Data Attributes
|
IXTA10N60P
Littelfuse Inc
Buy Now
Datasheet
|
Compare Parts:
IXTA10N60P
Littelfuse Inc
Power Field-Effect Transistor, 10A I(D), 600V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 500 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.74 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 200 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXTA10N60P
This table gives cross-reference parts and alternative options found for IXTA10N60P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA10N60P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
MTP10N60E7 | 10A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | onsemi | IXTA10N60P vs MTP10N60E7 |
MTB10N60E7 | 10A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | onsemi | IXTA10N60P vs MTB10N60E7 |
2SK3399(2-10S2B) | TRANSISTOR 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10S2B, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | IXTA10N60P vs 2SK3399(2-10S2B) |
IXFA10N60P | Power Field-Effect Transistor, 10A I(D), 600V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Littelfuse Inc | IXTA10N60P vs IXFA10N60P |
IXTP10N60P | Power Field-Effect Transistor, 10A I(D), 600V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IXYS Corporation | IXTA10N60P vs IXTP10N60P |
STB9NC60T4 | 9A, 600V, 0.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | STMicroelectronics | IXTA10N60P vs STB9NC60T4 |
IXFP10N60P | Power Field-Effect Transistor, 10A I(D), 600V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Littelfuse Inc | IXTA10N60P vs IXFP10N60P |