Datasheets
IXTH120P065T by:

Power Field-Effect Transistor,

Part Details for IXTH120P065T by Littelfuse Inc

Overview of IXTH120P065T by Littelfuse Inc

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Medical Imaging Robotics and Drones

Price & Stock for IXTH120P065T

Part # Distributor Description Stock Price Buy
DISTI # 03AH1463
Newark Mosfet, P-Ch, 65V, 120A, To-247, Channel Type:P Channel, Drain Source Voltage Vds:65V, Continuous Drain Current Id:120A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Littelfuse IXTH120P065T Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 246
  • 1 $5.4100
  • 25 $5.4100
  • 100 $5.0000
  • 250 $5.0000
  • 500 $5.0000
  • 1,000 $5.0000
  • 2,500 $4.2200
$4.2200 / $5.4100 Buy Now
DISTI # IXTH120P065T-ND
DigiKey MOSFET P-CH 65V 120A TO247 Min Qty: 1 Lead time: 44 Weeks Container: Tube Temporarily Out of Stock
  • 1 $7.8000
  • 30 $6.2287
  • 120 $5.5730
  • 510 $4.9174
  • 1,020 $4.4257
  • 2,010 $4.1470
$4.1470 / $7.8000 Buy Now

Part Details for IXTH120P065T

IXTH120P065T CAD Models

IXTH120P065T Part Data Attributes

IXTH120P065T Littelfuse Inc
Buy Now Datasheet
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IXTH120P065T Littelfuse Inc Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1000 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.01 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 505 pF
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T4
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 298 W
Pulsed Drain Current-Max (IDM) 360 A
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTH120P065T

This table gives cross-reference parts and alternative options found for IXTH120P065T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTH120P065T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXTP120P065T Power Field-Effect Transistor, Littelfuse Inc IXTH120P065T vs IXTP120P065T
IXTA120P065T Power Field-Effect Transistor, 120A I(D), 65V, 0.01ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN IXYS Corporation IXTH120P065T vs IXTA120P065T

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