Transistors
IXTK32P60P
Description: Power Field-Effect Transistor, 32A I(D), 600V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

Overview of IXTK32P60P by IXYS Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IXTK32P60P by IXYS Corporation

Part # Manufacturer Description Stock Price Buy
DISTI # 747-IXTK32P60P
Mouser Electronics MOSFETs -32 Amps -600V 0.350 Rds RoHS: Compliant 23
  • 1 $20.6000
  • 10 $18.3000
  • 25 $17.0800
  • 50 $16.5400
  • 100 $16.0100
  • 250 $14.9400
  • 500 $13.6600
$13.6600 / $20.6000 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 25 Package Multiple: 25 Lead time: 24 Weeks Container: Tube 0
Tube
  • 25 $15.4900
$15.4900 Buy Now
DISTI # IXTK32P60P
TTI MOSFETs -32 Amps -600V 0.350 Rds Min Qty: 300 Package Multiple: 25 Container: Tube Americas - 0
  • 300 $14.7800
  • 500 $13.5200
$13.5200 / $14.7800 Buy Now
DISTI # IXTK32P60P
TME Transistor: P-MOSFET, PolarP™, unipolar, -600V, -32A, 890W, TO264 Min Qty: 1 0
  • 1 $26.2800
  • 3 $23.8200
  • 10 $20.9200
$20.9200 / $26.2800 RFQ

CAD Models for IXTK32P60P by IXYS Corporation
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Part Data Attributes for IXTK32P60P by IXYS Corporation

IXTK32P60P
IXYS Corporation
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
IXYS CORP
Part Package Code
TO-264AA
Package Description
TO-264, 3 PIN
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
3500 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
Drain Current-Max (ID)
32 A
Drain-source On Resistance-Max
0.35 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-264AA
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e1
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
890 W
Pulsed Drain Current-Max (IDM)
96 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IXTK32P60P
    IXYS Corporation
    Power Field-Effect Transistor, 32A I(D), 600V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
    VS

Alternate Parts for IXTK32P60P

This table gives cross-reference parts and alternative options found for IXTK32P60P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTK32P60P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IXTK32P60P Power Field-Effect Transistor, Littelfuse Inc IXTK32P60P vs IXTK32P60P

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