Datasheets
IXTN60N50L2 by:

Power Field-Effect Transistor, 53A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4

Part Details for IXTN60N50L2 by IXYS Corporation

Overview of IXTN60N50L2 by IXYS Corporation

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Applications Automotive

Price & Stock for IXTN60N50L2

Part # Distributor Description Stock Price Buy
DISTI # 83R9989
Newark N Channel Power Mosfet, Linear L2, 500V, 53A, Sot-227B, Transistor Polarity:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:53A, On Resistance Rds(On):0.1Ohm, Transistor Mounting:Module, No. Of Pins:4Pins, Msl:-Rohs Compliant: Yes |Ixys Semiconductor IXTN60N50L2 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $49.3700
  • 5 $47.7200
  • 10 $46.0600
  • 25 $44.0400
  • 50 $42.0200
  • 100 $39.9900
$39.9900 / $49.3700 Buy Now
DISTI # 03AH1599
Newark Disc Mosfet N-Ch Linear L2 Sot-227B(Mini/ Tube Rohs Compliant: Yes |Ixys Semiconductor IXTN60N50L2 Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $36.4800
$36.4800 Buy Now
DISTI # 747-IXTN60N50L2
Mouser Electronics Discrete Semiconductor Modules 60 Amps 500V RoHS: Compliant 885
  • 1 $50.3400
  • 10 $44.8400
  • 20 $43.3600
  • 50 $42.5800
  • 100 $40.1600
$40.1600 / $50.3400 Buy Now
Future Electronics Single N-Channel 500 V 100 mOhm 735 W Power Mosfet - SOT-227B RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 10 Lead time: 44 Weeks Container: Tube 0
Tube
  • 10 $36.5200
  • 20 $36.2900
  • 40 $36.0600
  • 50 $35.9800
  • 150 $35.5300
$35.5300 / $36.5200 Buy Now
DISTI # IXTN60N50L2
TTI Discrete Semiconductor Modules 60 Amps 500V Min Qty: 300 Package Multiple: 10 Container: Tube Americas - 0
  • 300 $34.8000
$34.8000 Buy Now
DISTI # IXTN60N50L2
TME Module, single transistor, 500V, 53A, SOT227B, screw, Idm: 150A Min Qty: 1 0
  • 1 $47.5600
  • 10 $40.8100
  • 100 $37.9000
$37.9000 / $47.5600 RFQ

Part Details for IXTN60N50L2

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IXTN60N50L2 Part Data Attributes

IXTN60N50L2 IXYS Corporation
Buy Now Datasheet
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IXTN60N50L2 IXYS Corporation Power Field-Effect Transistor, 53A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Package Description PLASTIC, MINIBLOC-4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 3000 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 53 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 735 W
Pulsed Drain Current-Max (IDM) 150 A
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Finish Nickel (Ni)
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON

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