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Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH1768
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Newark | Disc Mosfet N-Ch Std-Polar To-3P (3)/Tube |Littelfuse IXTQ52N30P Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$5.1000 | Buy Now |
DISTI #
IXTQ52N30P-ND
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DigiKey | MOSFET N-CH 300V 52A TO3P Min Qty: 1 Lead time: 40 Weeks Container: Tube | Temporarily Out of Stock |
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$3.5763 / $6.7300 | Buy Now |
DISTI #
67036700
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Verical | Trans MOSFET N-CH 300V 52A 3-Pin(3+Tab) TO-3P Min Qty: 12 Package Multiple: 1 Date Code: 2301 | Americas - 300 |
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$5.8573 / $6.7921 | Buy Now |
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Quest Components | 240 |
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$6.2288 / $11.3250 | Buy Now | |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2023 Date Code: 2023 | 300 |
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$3.7750 / $10.1230 | Buy Now |
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IXTQ52N30P
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXTQ52N30P
Littelfuse Inc
Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 1000 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 300 V | |
Drain Current-Max (ID) | 52 A | |
Drain-source On Resistance-Max | 0.066 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 400 W | |
Pulsed Drain Current-Max (IDM) | 150 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IXTQ52N30P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTQ52N30P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IXTT50N30 | Power Field-Effect Transistor, 50A I(D), 300V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | IXTQ52N30P vs IXTT50N30 |
IXFT52N30P | Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | Littelfuse Inc | IXTQ52N30P vs IXFT52N30P |
IXTT52N30P | Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | IXTQ52N30P vs IXTT52N30P |
IXTH50N30 | Power Field-Effect Transistor, 50A I(D), 300V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Littelfuse Inc | IXTQ52N30P vs IXTH50N30 |
IXFV52N30P | Power Field-Effect Transistor, 52A I(D), 300V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220, 3 PIN | IXYS Corporation | IXTQ52N30P vs IXFV52N30P |
APT30M61SLLG | Power Field-Effect Transistor, 54A I(D), 300V, 0.061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXTQ52N30P vs APT30M61SLLG |
APT30M61BFLLG | Power Field-Effect Transistor, 54A I(D), 300V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | Microchip Technology Inc | IXTQ52N30P vs APT30M61BFLLG |
APT30M61SLL | Power Field-Effect Transistor, 54A I(D), 300V, 0.061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXTQ52N30P vs APT30M61SLL |
IXTA50N28T | Power Field-Effect Transistor, 50A I(D), 280V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IXYS Corporation | IXTQ52N30P vs IXTA50N28T |
APT30M61SLLG/TR | Power Field-Effect Transistor, 54A I(D), 300V, 0.061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXTQ52N30P vs APT30M61SLLG/TR |