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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
03AH1895
|
Newark | Disc Mosfet N-Ch Depl Mode-Std To-252D/Tube |Littelfuse IXTY01N100D RoHS: Not Compliant Min Qty: 70 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$2.1700 / $2.3400 | Buy Now |
DISTI #
IXTY01N100D-ND
|
DigiKey | MOSFET N-CH 1000V 400MA TO252AA Min Qty: 1 Lead time: 57 Weeks Container: Tube |
7891 In Stock |
|
$1.7866 / $4.8900 | Buy Now |
DISTI #
C1S425201333083
|
Chip1Stop | Disc Mosfet N-CH Depl Mode-Std TO-252D RoHS: Compliant | 12955 |
|
$2.0200 / $2.4300 | Buy Now |
DISTI #
C1S331700016724
|
Chip1Stop | Trans MOSFET N-CH 1KV 3-Pin(2+Tab) TO-252AA RoHS: Compliant pbFree: Yes | 254 |
|
$2.1560 | Buy Now |
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IXTY01N100D
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXTY01N100D
Littelfuse Inc
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | LITTELFUSE | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Drain Current-Max (ID) | 0.4 A | |
Drain-source On Resistance-Max | 80 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 1.1 W | |
Power Dissipation-Max (Abs) | 25 W | |
Pulsed Drain Current-Max (IDM) | 0.4 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IXTY01N100D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTY01N100D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IXTU01N100D | Power Field-Effect Transistor, | Littelfuse Inc | IXTY01N100D vs IXTU01N100D |
IXTY01N100D | Power Field-Effect Transistor, 0.1A I(D), 1000V, 110ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN | IXYS Corporation | IXTY01N100D vs IXTY01N100D |
IXTP01N100D | Power Field-Effect Transistor, 0.1A I(D), 1000V, 110ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AD, TO-220AD, 3 PIN | IXYS Corporation | IXTY01N100D vs IXTP01N100D |
IXTP01N100D | Power Field-Effect Transistor, | Littelfuse Inc | IXTY01N100D vs IXTP01N100D |
IXTU01N100D | Power Field-Effect Transistor, 0.1A I(D), 1000V, 110ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251AA, 3 PIN | IXYS Corporation | IXTY01N100D vs IXTU01N100D |